MJE13003G ON Semiconductor, MJE13003G Datasheet - Page 3

• Manufacturer Part Number: MJE13003G
• Description: TRANS POWER NPN 1.5A 400V TO-225
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE13003G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 500mA, 1.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 500mA, 2V
• Power - Max: 1.4W
• Frequency - Transition: 10MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MJE13003G; MJE13003GOS

10
10
10
10
10
10
1.4
1.2
0.8
0.6
0.4
80
60
40
30
20
10
−1
8
6
4
1
4
3
2
1
0
0.02
0.02
−0.4
0.03
0.03
V
T
CE
J
= 150°C
REVERSE
= 250 V
50°C
100°C
25°C
125°C
75°C
Figure 5. Collector Cutoff Region
−0.2
0.05
Figure 3. Base−Emitter Voltage
0.05
V
T
−55 °C
25°C
BE
J
Figure 1. DC Current Gain
= 150°C
0.07
I
I
, BASE−EMITTER VOLTAGE (VOLTS)
C
C
0.07
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
0.1
0.1
V
V
CE
CE
T
0
J
= 2 V
= 5 V
= −55°C
25°C
25°C
0.2
0.2
150°C
V
V
0.3
+0.2
0.3
BE(sat)
BE(on)
FORWARD
@ V
@ I
0.5
0.5
C
CE
/I
B
0.7
0.7
+0.4
= 2 V
= 3
1
1
http://onsemi.com
MJE13003
+0.6
2
2
3
0.35
0.25
0.15
0.05
500
300
200
100
1.6
1.2
0.8
0.4
0.3
0.2
0.1
70
50
30
20
10
2
0
0
7
5
0.02
0.002
0.1
Figure 4. Collector−Emitter Saturation Region
0.03
0.2
0.005
Figure 2. Collector Saturation Region
I
C
I
0.5
= 0.1 A
C
0.05
/I
B
0.01
= 3
1
I
V
0.07
C
R
Figure 6. Capacitance
, COLLECTOR CURRENT (AMP)
, REVERSE VOLTAGE (VOLTS)
C
0.3 A
I
0.02
B
ib
2
, BASE CURRENT (AMP)
0.1
5
0.5 A
0.05
10
0.2
25°C
20
0.1
0.3
1 A
50
T
0.2
J
= −55°C
0.5
1.5 A
150°C
100
0.7
T
0.5
J
200
T
= 25°C
J
C
= 25°C
ob
1
500 1000
1
2
2