TRANS POWER NPN 1.5A 400V TO-225

MJE13003G

Manufacturer Part NumberMJE13003G
DescriptionTRANS POWER NPN 1.5A 400V TO-225
ManufacturerON Semiconductor
SeriesSWITCHMODE™
MJE13003G datasheet
 

Specifications of MJE13003G

Transistor TypeNPNCurrent - Collector (ic) (max)1.5A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic3V @ 500mA, 1.5A
Dc Current Gain (hfe) (min) @ Ic, Vce8 @ 500mA, 2VPower - Max1.4W
Frequency - Transition10MHzMounting TypeThrough Hole
Package / CaseTO-225-3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other namesMJE13003G
MJE13003GOS
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 7/8

Download datasheet (108Kb)Embed
PrevNext
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions
shown.
10
5
2
1
5.0 ms
dc
0.5
T
= 25°C
C
0.2
THERMAL LIMIT (SINGLE PULSE)
0.1
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
0.0
CURVES APPLY BELOW RATED V
5
0.02
0.01
5
10
20
50
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 11. Active Region Safe Operating
Area
1.6
1.2
V
= 9 V
BE(off)
≤ 100°C
T
J
0.8
I
= 1 A
B1
0.4
5 V
3 V
1.5 V
0
0
100
200
300
400
500
V
, COLLECTOR−EMITTER CLAMP VOLTAGE (VOLTS)
CEV
Figure 12. Reverse Bias Safe Operating Area
1
0.8
0.6
0.4
0.2
0
MJE13003
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
10 ms
100 ms
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1.0 ms
The data of Figure 11 is based on T
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations. Allowable
CEO
current at the voltages shown on Figure 11 may be found at
any case temperature by using the appropriate curve on
MJE13003
Figure 13.
100
200
300
500
T
may be calculated from the data in Figure 10. At
J(pk)
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
MJE13003
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 12 gives RBSOA characteristics.
600
700
800
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
20
40
60
80
100
120
T
, CASE TEMPERATURE (°C)
C
Figure 13. Forward Bias Power Derating
http://onsemi.com
7
− V
C
= 25_C; T
C
J(pk)
≥ 25_C. Second breakdown limitations do
C
140
160
CE
is