MJE13003G ON Semiconductor, MJE13003G Datasheet - Page 7

• Manufacturer Part Number: MJE13003G
• Description: TRANS POWER NPN 1.5A 400V TO-225
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE13003G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 500mA, 1.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 500mA, 2V
• Power - Max: 1.4W
• Frequency - Transition: 10MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MJE13003G; MJE13003GOS

The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions
shown.
0.02
0.01
0.5
0.2
0.1
0.0
10
1.6
1.2
0.8
0.4
5
2
1
5
0
0
5
Figure 12. Reverse Bias Safe Operating Area
V
Figure 11. Active Region Safe Operating
CEV
100
T
I
B1
V
10
, COLLECTOR−EMITTER CLAMP VOLTAGE (VOLTS)
J
CE
≤ 100°C
= 1 A
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
200
THERMAL LIMIT (SINGLE PULSE)
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V
T
C
= 25°C
20
300
5 V
3 V
400
V
Area
BE(off)
1.5 V
50
dc
500
= 9 V
0.8
0.6
0.4
0.2
1
0
5.0 ms
20
100
600
MJE13003
100 ms
Figure 13. Forward Bias Power Derating
CEO
MJE13003
40
200
1.0 ms
700
10 ms
300
60
T
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DERATING
THERMAL
C
, CASE TEMPERATURE (°C)
800
500
MJE13003
80
7
FORWARD BIAS
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found at
any case temperature by using the appropriate curve on
Figure 13.
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 12 gives RBSOA characteristics.
SECOND BREAKDOWN
100
There are two limitations on the power handling ability of
The data of Figure 11 is based on T
T
For inductive loads, high voltage and high current must be
J(pk)
SAFE OPERATING AREA INFORMATION
DERATING
120
may be calculated from the data in Figure 10. At
C
140
≥ 25_C. Second breakdown limitations do
160
C
= 25_C; T
C
J(pk)
− V
CE
is