BU323ZG ON Semiconductor, BU323ZG Datasheet

BU323ZG

Manufacturer Part Number

BU323ZG

Description

TRANS DARL NPN 350V 10A TO-218

Manufacturer

ON Semiconductor

Datasheet

1.BU323ZG.pdf (6 pages)

Specifications of BU323ZG

Transistor Type

NPN - Darlington

Current - Collector (ic) (max)

10A

Voltage - Collector Emitter Breakdown (max)

350V

Vce Saturation (max) @ Ib, Ic

1.7V @ 250mA, 10A

Current - Collector Cutoff (max)

100µA

Dc Current Gain (hfe) (min) @ Ic, Vce

500 @ 5A, 4.6V

Power - Max

150W

Frequency - Transition

2MHz

Mounting Type

Through Hole

Package / Case

SOT-93, TO-218 (Straight Leads)

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

350 V

Emitter- Base Voltage Vebo

6 V

Maximum Dc Collector Current

10 A

Maximum Collector Cut-off Current

100 uA

Maximum Operating Temperature

+ 175 C

Dc Collector/base Gain Hfe Min

150

Minimum Operating Temperature

- 65 C

Collector Emitter Voltage V(br)ceo

350V

Power Dissipation Pd

150W

Dc Collector Current

10A

Dc Current Gain Hfe

500

Operating Temperature Range

-65Â°C To +175Â°C

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BU323ZG

Manufacturer:

TOSHIBA

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BU323ZG

Manufacturer:

Quantity:

30 000

Current page: 1 of 6
Download datasheet (174Kb)

BU323Z

NPN Silicon Power

Darlington

High Voltage Autoprotected

Darlington with a built−in active zener clamping circuit. This device is

specifically designed for unclamped, inductive applications such as

Electronic Ignition, Switching Regulators and Motor Control, and

exhibit the following main features:

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

October, 2009 − Rev. 14

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Sustaining Voltage

Collector−Emitter Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Derate above 25_C

Operating and Storage Junction Temperature

Range

Thermal Resistance, Junction−to−Case

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

The BU323Z is a planar, monolithic, high−voltage power

Integrated High−Voltage Active Clamp

Tight Clamping Voltage Window (350 V to 450 V) Guaranteed

Clamping Energy Capability 100% Tested in a Live

High DC Current Gain/Low Saturation Voltages

Design Guarantees Operation in SOA at All Times

Offered in Plastic SOT−93/TO−218 Type or

Pb−Free Packages are Available*

Over the −40°C to +125°C Temperature Range

Ignition Circuit

Specified Over Full Temperature Range

TO−220 Packages

Characteristic

Rating

− Continuous

− Peak

− Continuous

− Peak

= 25_C

Symbol

CEO

EBO

, T

qJC

stg

–65 to

+175

Max

350

150

260

6.0

3.0

6.0

1.0

W/_C

_C/W

Unit

Vdc

Adc

BU323Z

BU323ZG

10 AMPERE DARLINGTON

Device

360 − 450 VOLTS CLAMP,

BU323Z

ORDERING INFORMATION

AUTOPROTECTED

http://onsemi.com

BASE

150 WATTS

= Assembly Location

= Year

= Work Week

= Pb−Free Package

= Device Code

CASE 340D

COLLECTOR 2,4

STYLE 1

SOT−93

(Pb−Free)

Package

CLAMP

SOT−93

360 V

EMITTER 3

Publication Order Number:

30 Units / Rail

MARKING

DIAGRAM

Shipping

BU323ZG

BU323Z/D

AYWW

Related parts for BU323ZG

BU323ZG Summary of contents

Page 1

... AUTOPROTECTED 360 − 450 VOLTS CLAMP, 150 WATTS 360 V CLAMP COLLECTOR 2,4 BASE 1 EMITTER 3 MARKING 4 DIAGRAM SOT−93 AYWW CASE 340D BU323ZG STYLE Assembly Location Y = Year WW = Work Week G = Pb−Free Package BU323Z = Device Code ORDERING INFORMATION Package Shipping SOT−93 30 Units / Rail SOT− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (1) Collector−Emitter Clamping Voltage ( − 40°C to +125°C) C Collector−Emitter Cutoff Current (V = 200 Emitter−Base Leakage Current (V = 6.0 Vdc, ...

Page 3

6.5 A NOM Output transistor turns on: I High Voltage Circuit turns on 100 μA Avalanche diode turns on 250 V 300 V Icer Leakage Current Figure 1. ...

Page 4

CPEAK ( CPEAK ( CPEAK ( CPEAK (d) Figure 4. Energy Test Criteria for BU323Z The shaded area represents the amount of energy the device can sustain, under ...

Page 5

T = 125°C J 1000 100 25° 1 100 1000 I , COLLECTOR CURRENT (MILLIAMPS) C Figure 5. DC Current Gain 5.0 4 4.0 3 3.0 8 ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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