BU323ZG ON Semiconductor, BU323ZG Datasheet - Page 2

• Manufacturer Part Number: BU323ZG
• Description: TRANS DARL NPN 350V 10A TO-218
• Manufacturer: ON Semiconductor

Specifications of BU323ZG

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1.7V @ 250mA, 10A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 5A, 4.6V
• Power - Max: 150W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 10 A
• Maximum Collector Cut-off Current: 100 uA
• Maximum Operating Temperature: + 175 C
• Dc Collector/base Gain Hfe Min: 150
• Minimum Operating Temperature: - 65 C
• Collector Emitter Voltage V(br)ceo: 350V
• Power Dissipation Pd: 150W
• Dc Collector Current: 10A
• Dc Current Gain Hfe: 500
• Operating Temperature Range: -65°C To +175°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (1)
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
CLAMPING ENERGY (see notes)
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Collector−Emitter Clamping Voltage (I
Collector−Emitter Cutoff Current
Emitter−Base Leakage Current
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Diode Forward Voltage Drop
DC Current Gain
Current Gain Bandwidth
Output Capacitance
Input Capacitance
Repetitive Non−Destructive Energy Dissipated at turn−off:
Fall Time
Storage Time
Cross−over Time
(T
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
C
C
C
C
C
C
C
F
C
C
C
C
C
CE
EB
CB
EB
= 10 Adc)
= 8.0 Adc, I
= 10 Adc, I
= 7.0 Adc, I
= 8.0 Adc, I
= 10 Adc, I
= 5.0 Adc, V
= 8.0 Adc, V
= 6.5 Adc, V
= 5.0 Adc, V
= 0.2 Adc, V
= 7.0 A, L = 8.0 mH, R
= − 40°C to +125°C)
= 6.0 Vdc, I
= 6.0 V)
= 200 V, I
= 10 Vdc, I
B
B
B
B
B
B
CE
CE
CE
CE
CE
= 0.25 Adc)
= 0.25 Adc)
E
= 0)
= 100 mAdc)
= 70 mAdc)
= 0.1 Adc)
C
= 0, f = 1.0 MHz)
= 0)
= 2.0 Vdc)
= 2.0 Vdc)
= 1.5 Vdc)
= 4.6 Vdc)
= 10 Vdc, f = 1.0 MHz)
BE
Characteristic
= 100 Ω) (see Figures 2 and 4)
(I
V
V
C
C
CC
BE(off)
= 7.0 A)
= 6.5 A, I
(T
= 14 V, V
C
= 25_C unless otherwise noted)
= 0, R
B1
Z
(T
(T
BE(off)
= 45 mA,
= 300 V)
C
C
= − 40°C to +125°C)
= − 40°C to +125°C)
http://onsemi.com
= 0,
(T
(T
C
C
= 125°C)
= 125°C)
2
W
Symbol
V
V
V
V
CLAMP
CE(sat)
I
I
BE(sat)
BE(on)
CLAMP
C
CEO
h
EBO
C
V
f
t
t
t
FE
si
T
ob
fi
c
ib
F
Min
350
150
500
200
1.1
1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
625
1.7
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3400
Max
450
100
200
550
2.2
2.5
1.6
1.8
1.8
2.1
1.7
2.1
2.3
2.5
2.0
50
30
—
—
—
—
mAdc
μAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
mJ
pF
pF
μs
μs
—
ns