2N4125_S00Z Fairchild Semiconductor, 2N4125_S00Z Datasheet

2N4125_S00Z

Manufacturer Part Number

2N4125_S00Z

Description

TRANSISTOR PNP 30V 200MA TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.2N4125BU.pdf (6 pages)

Specifications of 2N4125_S00Z

Transistor Type

PNP

Current - Collector (ic) (max)

200mA

Voltage - Collector Emitter Breakdown (max)

30V

Vce Saturation (max) @ Ib, Ic

400mV @ 5mA, 50mA

Dc Current Gain (hfe) (min) @ Ic, Vce

50 @ 2mA, 1V

Power - Max

625mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Frequency - Transition

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2001 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

This device is designed for use as general purpose amplifiers

and switches requiring collector currents of 10 A to 100 mA.

Absolute Maximum Ratings*

, T

PNP General Purpose Amplifier

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

stg

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

B E

2N4125

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

2N4125

Max

83.3

625

200

5.0

-55 to +150

Value

200

4.0

Units

mW/ C

Units

C/W

2N4125, Rev A

Related parts for 2N4125_S00Z

2N4125_S00Z Summary of contents

Page 1

... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient R JA 2001 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 4.0 V 200 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage* V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Emitter-Cutoff Current EBO ON CHARACTERISTICS Current Gain FE V Collector-Emitter Saturation Voltage ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 125 °C 200 150 25 °C 100 - 40 °C 50 0.1 0.2 0 COLLECTOR CURRE NT (mA) C Base-Emitter Saturation Voltage vs Collector ...

Page 4

Typical Characteristics Noise Figure vs Frequency 100 1.0 mA 100 0 FREQUENCY (kHz) Switching Times ...

Page 5

Typical Characteristics Voltage Feedback Ratio 100 COLLECTOR CURRENT (mA) C Output Admittance 1000 100 10 0 COLLECTOR CURRENT (mA) C PNP General Purpose Amplifier (continued 0.1 0 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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