2N6076 Fairchild Semiconductor, 2N6076 Datasheet

TRANSISTOR PNP 25V 500MA TO-92

2N6076

Manufacturer Part Number
2N6076
Description
TRANSISTOR PNP 25V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N6076

Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-

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Manufacturer
Quantity
Price
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Part Number:
2N6076
Manufacturer:
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Part Number:
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Manufacturer:
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2N6076 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
2N6076
PNP Small Signal Transistor
Features
• BVceo .....25V(Min)
• hFE ...... 100(Min) @ Vce=10V, Ic=10mA
• Pb free
Absolute Maximum Ratings
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
* 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics*
* DC Item are tested by Pulse Test : Pulse Widthd300us, Duty Cycled2%
V
V
V
I
T
T
P
R
3. These ratings are based on a maximum junction temperature of 150 degrees C.
4. Minimum land pad.
BV
BV
BV
I
I
I
h
V
V
V
C
h
C
CBO
CES
EBO
J
STG
FE
fe
CBO
CEO
EBO
C
CE
BE
BE
Symbol
Symbol
TJA
cb
Symbol
CBO
CEO
EBO
(sat)
(on)
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Collector Power Dissipation, by R
Thermal Resistance, Junction to Ambient
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Small Signal Current Gain
Parameter
Parameter
Parameter
T
a
=25qC unless otherwise noted
T
a
=25qC unless otherwise noted
T
a
= 25°C unless otherwise noted
TJA
I
I
I
V
V
V
V
V
I
I
V
V
V
C
C
E
C
C
CE
CE
CE
CE
CE
CE
CB
CE
= -10PA, I
= -100PA, I
= -10mA, I
= -10mA, I
= -10mA, I
= -10V, I
= -25V
= -25V, T=+100qC
= -25V
= -3V
= 1V, I
= -10V, I
= -10V, f = 1MHz
1
Test Condition
C
C
C
= -10mA
B
B
B
C
E
= 0
= 10mA, f = 1kHz
= 0
= -1mA
= -1mA
= -10mA
= 0
-55 ~ 150
Value
Max
500
150
625
200
-25
-25
-5
Min.
-0.5
100
100
-25
-25
-5
1
Max.
-0.25
-0.80
-100
-100
-100
500
-1.2
750
10
13
www.fairchildsemi.com
Unit
Unit
qC/W
July 2008
mW
mA
qC
qC
V
V
V
Unit
nA
uA
nA
nA
pF
V
V
V
V
V
V

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2N6076 Summary of contents

Page 1

... Base-Emitter On Voltage BE C Output Capacitance cb h Small Signal Current Gain Item are tested by Pulse Test : Pulse Widthd300us, Duty Cycled2% © 2007 Fairchild Semiconductor Corporation 2N6076 Rev. 1.0 25°C unless otherwise noted a T =25qC unless otherwise noted a TJA T =25qC unless otherwise noted ...

Page 2

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation 2N6076 Rev. 1.0.0 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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