BU508AFTBTU

Manufacturer Part NumberBU508AFTBTU
DescriptionTRANSISTOR NPN TV 700V 5A TO-3PF
ManufacturerFairchild Semiconductor
BU508AFTBTU datasheet
 

Specifications of BU508AFTBTU

Transistor TypeNPNCurrent - Collector (ic) (max)5A
Voltage - Collector Emitter Breakdown (max)700VVce Saturation (max) @ Ib, Ic1V @ 2A, 4.5A
Current - Collector Cutoff (max)1mADc Current Gain (hfe) (min) @ Ic, Vce2.25 @ 4.5A, 5V
Power - Max60WMounting TypeThrough Hole
Package / CaseTO-3PF-3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Frequency - Transition-  
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TV Horizontal Output Applications
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector-Emitter Voltage
CES
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
*Collector Current (Pulse)
CP
P
Collector Dissipation (T
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
V
(sus)
* Collector-Emitter Sustaining Voltage
CEO
BV
Emitter-Base Breakdown Voltage
EBO
I
Collector Cut-off Current
CES
I
Emitter Cut-off Current
EBO
h
* DC Current Gain
FE
V
(sat)
* Collector-Emitter Saturation Voltage
CE
V
(sat)
* Base-Emitter Saturation Voltage
BE
* Pulse Test: PW = 300 s, duty cycle = 1.5% Pulsed
©2002 Fairchild Semiconductor Corporation
BU508AF
T
=25 C unless otherwise noted
C
Parameter
=25 C)
C
T
=25 C unless otherwise noted
C
Test Condition
I
= 100mA, I
= 0
C
B
I
= 10mA, I
= 0
E
C
V
= 1500V, V
= 0
CE
BE
V
= 5V, I
= 0
EB
C
V
= 5V, I
= 4.5A
CE
C
I
= 4.5A, I
= 2A
C
B
I
= 4.5A, I
= 2A
C
B
TO-3PF
1
1.Base
2.Collector
3.Emitter
Value
Units
1500
V
700
V
5
V
5
A
15
A
60
W
150
C
- 65 ~ 150
C
Min.
Typ.
Max.
Units
700
V
5
V
1
mA
10
mA
2.25
1
V
1.5
V
Rev. B, December 2002

BU508AFTBTU Summary of contents

  • Page 1

    ... CES I Emitter Cut-off Current EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE * Pulse Test 300 s, duty cycle = 1.5% Pulsed ©2002 Fairchild Semiconductor Corporation BU508AF T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 100mA ...

  • Page 2

    ... I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 100 I Max. (Pulsed Max. (Continuous 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 10000 1000 100 0.1 Figure 2. Base-Emitter Saturation Voltage 1000 100 10 10 100 1 Figure 4. Collector Output Capacitance 80 70 ...

  • Page 3

    ... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2002 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 0.85 0.03 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 2.00 0.20 3.30 0.20 +0.20 0.90 – ...

  • Page 4

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...