BU508AFTBTU Fairchild Semiconductor, BU508AFTBTU Datasheet

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BU508AFTBTU

Manufacturer Part Number
BU508AFTBTU
Description
TRANSISTOR NPN TV 700V 5A TO-3PF
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BU508AFTBTU

Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
700V
Vce Saturation (max) @ Ib, Ic
1V @ 2A, 4.5A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
2.25 @ 4.5A, 5V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU508AFTBTU
Manufacturer:
ST
Quantity:
5 210
©2002 Fairchild Semiconductor Corporation
TV Horizontal Output Applications
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW = 300 s, duty cycle = 1.5% Pulsed
I
V
V
V
I
I
P
T
T
V
BV
I
h
V
V
CES
C
CP
EBO
FE
J
STG
CES
CEO
EBO
C
CEO
CE
BE
Symbol
Symbol
EBO
(sat)
(sat)
(sus)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
Junction Temperature
Storage Temperature
* Collector-Emitter Sustaining Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
BU508AF
I
I
V
V
V
I
I
C
E
C
C
CE
EB
CE
= 100mA, I
= 10mA, I
= 4.5A, I
= 4.5A, I
Test Condition
= 5V, I
= 1500V, V
= 5V, I
C
C
B
B
C
= 0
= 4.5A
= 2A
= 2A
B
= 0
= 0
BE
= 0
1
1.Base
Min.
2.25
700
5
- 65 ~ 150
2.Collector
Value
1500
700
150
15
60
Typ.
5
5
TO-3PF
3.Emitter
Max.
1.5
10
1
1
Rev. B, December 2002
Units
Units
W
V
V
V
A
A
C
C
mA
mA
V
V
V
V

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BU508AFTBTU Summary of contents

Page 1

... CES I Emitter Cut-off Current EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE * Pulse Test 300 s, duty cycle = 1.5% Pulsed ©2002 Fairchild Semiconductor Corporation BU508AF T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 100mA ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 100 I Max. (Pulsed Max. (Continuous 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 10000 1000 100 0.1 Figure 2. Base-Emitter Saturation Voltage 1000 100 10 10 100 1 Figure 4. Collector Output Capacitance 80 70 ...

Page 3

... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2002 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 0.85 0.03 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 2.00 0.20 3.30 0.20 +0.20 0.90 – ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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