2N5210_J05Z Fairchild Semiconductor, 2N5210_J05Z Datasheet

TRANSISTOR NPN 50V 100MA TO-92

2N5210_J05Z

Manufacturer Part Number
2N5210_J05Z
Description
TRANSISTOR NPN 50V 100MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N5210_J05Z

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
700mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 100µA, 5V
Power - Max
625mW
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1 A to 50 mA.
V
V
V
I
T
P
R
R
Symbol
C
Symbol
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
J
CEO
CBO
EBO
D
Thermal Characteristics
, T
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Absolute Maximum Ratings*
JC
JA
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Derate above 25 C
Characteristic
2N5210/MMBT5210
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
C
B E
2N5210
83.3
625
200
5.0
Max.
TO-92
-55 to +150
MMBT5210
Value
100
4.5
50
50
350
357
2.8
C
B
Units
Units
mW/ C
mA
mW
C/W
C/W
V
V
V
SOT-23
C
Mark: 3M
2N5210, Rev B
E

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2N5210_J05Z Summary of contents

Page 1

... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient R JA 2002 Fairchild Semiconductor Corporation 2N5210/MMBT5210 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N5210 625 5.0 83.3 200 C E ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V sat CE( ) ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 1200 o 125 C 1000 800 600 400 200 0 0.3 3 0.01 0.03 0 COLLECTOR CURRENT ( Base-Emitter ...

Page 4

Typical Characteristics Input and Output Capacitance vs Reverse Bias Voltage REVERSE BIAS VOLTAGE (V) Normalized Collector-Cutoff Current vs Ambient Temperature 1000 100 100 ...

Page 5

Typical Characteristics Contours of Constant Narrow Band Noise Figure 10,000 5,000 2,000 1,000 500 100 Hz BANDWIDTH 200 = 20 Hz 100 1 10 100 I - COLLECTOR CURRENT ( C Contours of ...

Page 6

Typical Common Emitter Characteristics Typical Common Emitter Characteristics 1.4 1.3 h 1 COLLECTOR VOLTAGE (V) CE Typical Common Emitter Characteristics 100 f = ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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