2N5307 Fairchild Semiconductor, 2N5307 Datasheet

TRANSISTOR DARL NPN 40V TO-92

2N5307

Manufacturer Part Number
2N5307
Description
TRANSISTOR DARL NPN 40V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N5307

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.4V @ 200µA, 200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 2mA, 5V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-

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©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device designed for applications requiring extremely high current
• Sourced from Process 05.
• See MPSA14 for characteristics.
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
V
V
V
I
T
C
gain at currents to 1.0A.
J
CEO
CBO
EBO
, T
Symbol
ST
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
T
a
- Continuous
=25 C unless otherwise noted
2N5307
1. Emitter 2. Collector 3. Base
1
-55 ~ +150
Value
1.2
40
40
12
TO-92
Units
V
V
V
A
Rev. B, July 2002
C

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2N5307 Summary of contents

Page 1

... These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ©2002 Fairchild Semiconductor Corporation 2N5307 T =25 C unless otherwise noted a Parameter ...

Page 2

... Output Capacitance ob h Small-Signal Current Gain fe * Pulse Test: Pulse 300 s, Duty Cycle 2.0% Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Test Condition I = 10mA 0 0 ...

Page 3

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, July 2002 ...

Page 4

CROSSVOLT â â â â Rev. I ...

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