2N5401_S00Z Fairchild Semiconductor, 2N5401_S00Z Datasheet
2N5401_S00Z
Specifications of 2N5401_S00Z
Related parts for 2N5401_S00Z
2N5401_S00Z Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob N Noise Figure F * Pulse Test: Pulse Width 300 s, Duty Cycle 2% ©2004 Fairchild Semiconductor Corporation 2N5401 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 ...
Page 2
... V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 1000 100 -10 I [mA], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2004 Fairchild Semiconductor Corporation - - -0.1 -0.01 -100 -1000 -1 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 0.1 -0.8 -1.0 -1 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, May 2004 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ ...