KSD1273QYDTU Fairchild Semiconductor, KSD1273QYDTU Datasheet

TRANSISTOR NPN 60V 3A TO-220F

KSD1273QYDTU

Manufacturer Part Number
KSD1273QYDTU
Description
TRANSISTOR NPN 60V 3A TO-220F
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSD1273QYDTU

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 2A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 500mA, 4V
Power - Max
2W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2001 Fairchild Semiconductor Corporation
High h
• ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
I
I
P
T
T
I
V
V
V
P
BV
I
I
h
V
f
FE
no Insulator.
C
CP
B
CEO
CBO
EBO
T
J
STG
FE
C
CBO
CEO
EBO
C
CE
Symbol
Symbol
CEO
(sat)
Classification
Classification
FE
, AF Power Amplifier
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Emitter Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Parameter
a
C
T
=25 C)
=25 C)
500 ~ 1000
C
=25 C unless otherwise noted
Parameter
T
C
Q
=25 C unless otherwise noted
KSD1273
I
V
V
V
V
V
I
C
C
CB
CE
EB
CE
CE
= 25mA, I
= 2A, I
Test Condition
= 80V, I
= 60V, I
= 6V, I
= 4V, I
= 12V, I
B
800 ~ 1500
C
C
= 0.05A
E
B
C
B
= 0
= 0.5A
= 0
= 0
= 0
= 0.2A
P
1
1.Base
Min.
500
60
- 55 ~ 150
2.Collector
Value
150
80
60
40
3
6
1
2
6
TO-220F
Typ.
30
1200 ~ 2500
3.Emitter
2500
O
Max.
100
100
100
1
Rev. A1, June 2001
Units
W
W
V
V
V
A
A
A
Units
C
C
MHz
V
V
A
A
A

Related parts for KSD1273QYDTU

KSD1273QYDTU Summary of contents

Page 1

... Collector Cut-off Current CEO I Emitter Cut-off Current EBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T h Classification FE Classification h FE ©2001 Fairchild Semiconductor Corporation KSD1273 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition I = 25mA 80V, I ...

Page 2

... Figure 1. Static Characteristic 10000 1000 100 10 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. DC current Gain 10000 V (sat) 1000 BE 100 10 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Collector-Base Saturation Voltage ©2001 Fairchild Semiconductor Corporation 10000 I = 1.2mA 1mA B 1000 I = 800uA 600uA 400uA B 100 I = 200uA ...

Page 3

... Typical Characteristics 1000 100 [V], COLLECTO-BASE VOLTAGE CB Figure 7. Collector Output Capacitance 10 I max(pulse (max 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 9. Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 1000 f = 1MHz 100 10 1 100 1000 0.01 Figure 8. Current Gain Bandwidth Product (3) 0 100 0 0.1 ...

Page 4

... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2001 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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