KSD1588OTU Fairchild Semiconductor, KSD1588OTU Datasheet

TRANSISTOR NPN 60V 7A TO-220F

KSD1588OTU

Manufacturer Part Number
KSD1588OTU
Description
TRANSISTOR NPN 60V 7A TO-220F
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSD1588OTU

Transistor Type
NPN
Current - Collector (ic) (max)
7A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 500mA, 5A
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 3A, 1V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Low Speed Switching
• Complement to KSB1097
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 300 s, Duty Cycle 10%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2%
h
I
I
I
P
P
I
h
h
V
V
V
T
T
I
V
V
FE1
C
CP
B
EBO
CBO
FE2
C
C
J
STG
CBO
CEO
EBO
CE
BE
Symbol
FE1
Symbol
(sat)
(sat)
Classification
Classification
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Parameter
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
Parameter
T
40 ~ 80
C
=25 C unless otherwise noted
R
KSD1588
V
V
V
V
I
I
C
C
CB
EB
CE
CE
= 5A, I
= 5A, I
= 5V, I
= 80V, I
= 1V, I
= 1V, I
Test Condition
80 ~ 120
B
B
O
= 0.5A
= 0.5A
C
C
C
E
= 0
= 3A
= 5A
= 0
1
1.Base
-55 ~ 150
2.Collector
Value
100
150
3.5
60
15
30
7
2
7
TO-220F
Min.
40
20
100 ~ 200
Max.
3.Emitter
Y
200
0.5
1.5
10
10
Rev. A, February 2000
Units
W
W
V
V
V
A
A
A
Units
C
C
V
V
A
A

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KSD1588OTU Summary of contents

Page 1

... Current Gain FE1 h FE2 V (sat) *Collector-Emitter Saturation Voltage CE V (sat) *Base-Emitter Saturation Voltage BE * Pulse Test: PW 350 s, Duty Cycle 2% h Classification FE1 Classification h FE1 ©2000 Fairchild Semiconductor International KSD1588 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Parameter Test Condition V = 80V ...

Page 2

... CE 0.01 0.001 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 160 140 120 100 100 C], CASE TEMPERATURE C Figure 5. Derating Curve Safe Operating Area ©2000 Fairchild Semiconductor International 1000 100 I = 6mA 4mA 2mA 0.001 100 0.1 0.01 1 ...

Page 3

... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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