LFE2M20E-6FN484C LATTICE SEMICONDUCTOR, LFE2M20E-6FN484C Datasheet - Page 55

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LFE2M20E-6FN484C

Manufacturer Part Number
LFE2M20E-6FN484C
Description
FPGA LatticeECP2M Family 19000 Cells 90nm (CMOS) Technology 1.2V 484-Pin FBGA
Manufacturer
LATTICE SEMICONDUCTOR
Datasheet

Specifications of LFE2M20E-6FN484C

Package
484FBGA
Family Name
LatticeECP2M
Device Logic Units
19000
Typical Operating Supply Voltage
1.2 V
Maximum Number Of User I/os
304
Ram Bits
1246208

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Lattice Semiconductor
DC Electrical Characteristics
I
I
I
I
I
I
I
I
V
C1
C2
1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured
2. When used as V
3. Applicable to general purpose I/Os in top and bottom banks.
4. T
Symbol
IL
IH
PU
PD
BHLS
BHHS
BHLO
BHHO
BHT
, I
1, 3
with the output driver active. Bus maintenance circuits are disabled.
4
4
A
IH
25
1, 2
o
C, f = 1.0MHz.
Input or I/O Low Leakage
Input or I/O High Leakage
I/O Active Pull-up Current
I/O Active Pull-down Current
Bus Hold Low Sustaining Current V
Bus Hold High Sustaining Current V
Bus Hold Low Overdrive Current 0  V
Bus Hold High Overdrive Current 0  V
Bus Hold Trip Points
I/O Capacitance
Dedicated Input Capacitance
REF
, maximum leakage = 25uA
Parameter
Over Recommended Operating Conditions
0  V
0  V
0  V
(V
V
V
V
V
V
IL
IN
IN
CCIO
CC
CCIO
CC
CCIO
(MAX)  V
= V
= 0.7 V
= 1.2V, V
= 1.2V, V
IN
IN
IN
IN
IN
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
- 0.2V) < V
IL
 (V
 0.7 V
 V
 V
 V
(MAX)
CCIO
CCIO
IH
CCIO
CCIO
(MAX)
IO
IO
Condition
IN
CCIO
3-3
= 0 to V
= 0 to V
 V
- 0.2V)
IN
IH
 3.6V
(MAX)
IH
IH
(MAX)
(MAX)
DC and Switching Characteristics
LatticeECP2/M Family Data Sheet
V
IL
Min.
-30
-30
(MAX)
30
30
Typ.
5
5
V
IH
Max.
-210
-210
150
210
210
10
(MIN)
8
6
Units
µA
µA
µA
µA
µA
µA
µA
µA
pf
pf
V

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