BUT11APX,127 NXP Semiconductors, BUT11APX,127 Datasheet

TRANS NPN 1000V 5A SOT186A

BUT11APX,127

Manufacturer Part Number
BUT11APX,127
Description
TRANS NPN 1000V 5A SOT186A
Manufacturer
NXP Semiconductors
Datasheet
1.BUT11APX127.pdf (8 pages)

Specifications of BUT11APX,127

Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
1.5V @ 600mA, 3A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
14 @ 500mA, 5V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
934055258127
BUT11APX
BUT11APX
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
September 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
V
I
I
P
V
I
t
SYMBOL
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
stg
j
CESM
CBO
CEO
tot
CEsat
CESM
CEO
CBO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
case
CONDITIONS
V
T
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
Csat
1 2 3
hs
hs
1
BE
BE
=2.5A,I
= 0 V
= 0 V
25 ˚C
25 ˚C
B1
=0.5A,I
B2
=0.8A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
145
-65
3.5
55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUT11APX
MAX.
MAX.
MAX.
1000
e
1000
1000
c
1000
3.95
450
160
450
150
150
1.5
10
32
10
32
5
5
2
4
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
A
A
V
A
V
V
V
A
A
A
A

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BUT11APX,127 Summary of contents

Page 1

Philips Semiconductors Silicon Diffused Power Transistor GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and ...

Page 2

Philips Semiconductors Silicon Diffused Power Transistor ISOLATION LIMITING VALUE & CHARACTERISTIC ˚C unless otherwise specified hs SYMBOL PARAMETER V R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal isol three terminals to external heatsink C Capacitance ...

Page 3

Philips Semiconductors Silicon Diffused Power Transistor 300R 6V 30-60 Hz Fig.1. Test circuit for 250 200 100 0 VCE / V Fig.2. Oscilloscope display for V VIM Fig .3. Test circuit ...

Page 4

Philips Semiconductors Silicon Diffused Power Transistor IC ts toff IBon IB Fig. 7. Switching times waveforms with inductive load. % 120 110 100 tot ...

Page 5

Philips Semiconductors Silicon Diffused Power Transistor Zth / (K/W) 10 0.5 1 0.2 0.1 0.05 0.1 0. 0.01 D=0 0.001 1u 10u 100u 1m 10m Fig.13. Transient thermal impedance f(t); parameter D = ...

Page 6

Philips Semiconductors Silicon Diffused Power Transistor 100 = 0.01 ICM max 10 IC max ( 0.1 0. 100 Fig.16. Forward bias safe operating area. T (1) P max and P peak max lines. ...

Page 7

Philips Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass Recesses (2x) 2.5 0.8 max. depth 3 max. not tinned 13.5 min. 0.4 Fig.17. SOT186A; The seating plane is electrically isolated from all terminals. Notes ...

Page 8

Philips Semiconductors Silicon Diffused Power Transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

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