PBSS5140S,126 NXP Semiconductors, PBSS5140S,126 Datasheet

TRANS NPN 40V 1A SOT54

PBSS5140S,126

Manufacturer Part Number
PBSS5140S,126
Description
TRANS NPN 40V 1A SOT54
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS5140S,126

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 100mA, 5V
Power - Max
830mW
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056904126
PBSS5140S AMO
PBSS5140S AMO
Product data sheet
Supersedes data of 2001 Nov 27
DATA SHEET
book, halfpage
PBSS4140S
40 V low V
M3D186
DISCRETE SEMICONDUCTORS
CEsat
NPN transistor
2004 Aug 20

Related parts for PBSS5140S,126

PBSS5140S,126 Summary of contents

Page 1

DATA SHEET book, halfpage PBSS4140S 40 V low V Product data sheet Supersedes data of 2001 Nov 27 DISCRETE SEMICONDUCTORS M3D186 NPN transistor CEsat 2004 Aug 20 ...

Page 2

... NXP Semiconductors 40 V low V NPN transistor CEsat FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • continuous current • High current switching • Improved device reliability due to reduced heat generation. APPLICATIONS • Medium power switching and muting • ...

Page 3

... NXP Semiconductors 40 V low V NPN transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off CBO current ...

Page 4

... NXP Semiconductors 40 V low V NPN transistor CEsat 1000 handbook, halfpage h FE (1) 800 600 (2) 400 (3) 200 0 − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values handbook, halfpage V CEsat (mV (1) (2) (3) ...

Page 5

... NXP Semiconductors 40 V low V NPN transistor CEsat 400 handbook, halfpage f T (MHz) 300 200 100 0 0 200 400 Fig.6 Transition frequency as a function of collector current. 2004 Aug 20 MHC081 600 800 1000 I C (mA) 5 Product data sheet PBSS4140S ...

Page 6

... NXP Semiconductors 40 V low V NPN transistor CEsat PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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