PBSS8110AS,126 NXP Semiconductors, PBSS8110AS,126 Datasheet

TRANS NPN 100V 1A LOW SAT TO92

PBSS8110AS,126

Manufacturer Part Number
PBSS8110AS,126
Description
TRANS NPN 100V 1A LOW SAT TO92
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS8110AS,126

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
200mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 250mA, 10V
Power - Max
830mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057764126
PBSS8110AS AMO
PBSS8110AS AMO
Product data sheet
Supersedes data of 2003 Dec 03
dbook, halfpage
DATA SHEET
PBSS8110AS
100 V, 1 A
NPN low V
M3D186
DISCRETE SEMICONDUCTORS
CEsat
(BISS) transistor
2004 Aug 10

Related parts for PBSS8110AS,126

PBSS8110AS,126 Summary of contents

Page 1

DATA SHEET dbook, halfpage M3D186 PBSS8110AS 100 NPN low V Product data sheet Supersedes data of 2003 Dec 03 DISCRETE SEMICONDUCTORS (BISS) transistor CEsat 2004 Aug 10 ...

Page 2

... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat FEATURES • SOT54 package • Low collector-emitter saturation voltage V • High collector current capability: I • Higher efficiency leading to less heat generation. APPLICATIONS • Automotive 42 V power • Telecom infrastructure • General industrial applications • ...

Page 3

... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC total power dissipation ...

Page 4

... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I collector cut-off current CES I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage ...

Page 5

... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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