PBSS9110AS,126 NXP Semiconductors, PBSS9110AS,126 Datasheet
PBSS9110AS,126
Specifications of PBSS9110AS,126
PBSS9110AS AMO
PBSS9110AS AMO
Related parts for PBSS9110AS,126
PBSS9110AS,126 Summary of contents
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PBSS9110AS 100 PNP low V Rev. 03 — 21 November 2009 1. Product profile 1.1 General description PNP low V 1.2 Features SOT54 package Low collector-emitter saturation voltage V High collector current capability I High efficiency leading ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Ordering information Type number Package Name Description PBSS9110AS - plastic single-ended leaded (through hole) package; 3 leads 4. Marking Table 4. Type number PBSS9110AS [1] Made in Hong Kong PBSS9110AS_3 Product data sheet Discrete pinning Description collector base ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. (1) 1cm (2) Standard footprint Fig 1. Power derating curves PBSS9110AS_3 ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint (K/W) (1) ( (3) (4) (5) (6) 10 (7) (8) (9) (10) 1 −1 10 −5 − Mounted on FR4 PCB; standard footprint (1) δ (2) δ ...
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... NXP Semiconductors 7. Characteristics Table 7. Characteristics ° unless otherwise specified. amb Symbol Parameter I collector-base cut-off current CBO I collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage BEsat V base-emitter turn-on voltage ...
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... NXP Semiconductors 600 ( 400 (2) (3) 200 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 3. DC current gain as a function of collector current; typical values −1 V CEsat (V) −1 −10 (1) (2) (3) −2 −10 −1 − ...
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... NXP Semiconductors −10 V BEsat (V) −1 (1) (2) (3) −1 −10 −1 −10 −1 −10 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 7. Base-emitter saturation voltage as a function of collector current; typical values CEsat (Ω (1) (2) (3) 1 −1 10 −1 −10 − ...
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... NXP Semiconductors Fig 11. Collector current as a function of collector-emitter voltage; typical values PBSS9110AS_3 Product data sheet −2 (mA) = − −40.5 (A) −36 −1.6 −31.5 −27 −1.2 −0.8 −0.4 0 −1 −2 −3 0 Rev. 03 — 21 November 2009 PBSS9110AS 100 PNP low V (BISS) transistor CEsat 001aaa384 −22.5 − ...
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... NXP Semiconductors 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 mm 5.0 0.40 0.55 0.38 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE ...
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... Document ID Release date PBSS9110S_3 20091121 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 9 “Equivalent on-resistance as a function of collector current; typical • ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 12. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Legal information 10.1 Data sheet status ...