2PB709AQ,115 NXP Semiconductors, 2PB709AQ,115 Datasheet - Page 3

• Manufacturer Part Number: 2PB709AQ,115
• Description: TRANSISTOR PNP 45V 100MA SC59
• Manufacturer: NXP Semiconductors

Specifications of 2PB709AQ,115

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 2mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 60MHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2PB709AQ T/R; 2PB709AQ T/R; 934028570115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 23
R
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
PNP general purpose transistor
th j-a
c
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
p
2PB709AQ
2PB709AR
2PB709AS
2PB709AQ
2PB709AR
2PB709AS
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
E
E
C
C
C
E
C
= 0; V
= 0; V
= i
= 0; V
= −2 mA; V
= −100 mA; I
= −1 mA; V
e
= 0; V
CB
CB
EB
3
= −45 V
= −45 V; T
= −5 V
CONDITIONS
CB
note 1
CE
CE
B
= −10 V; f = 1 MHz
= −10 V
= −10 V; f = 100 MHz
= −10 mA; note 1
CONDITIONS
j
= 150 °C
−
−
−
160
210
290
−
−
60
70
80
MIN.
VALUE
500
−10
−5
−10
260
340
460
−500
5
−
−
−
Product data sheet
MAX.
2PB709A
UNIT
K/W
nA
μA
nA
mV
pF
MHz
MHz
MHz
UNIT