2N4033 STMicroelectronics, 2N4033 Datasheet

TRANSISTOR PNP -80V -1A TO-39

2N4033

Manufacturer Part Number
2N4033
Description
TRANSISTOR PNP -80V -1A TO-39
Manufacturer
STMicroelectronics
Datasheet

Specifications of 2N4033

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
800mW
Frequency - Transition
500MHz
Mounting Type
Through Hole
Package / Case
TO-39-3, TO-205AD, Metal Can
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
497-2582-5

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N4033
Manufacturer:
ST
Quantity:
230
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Manufacturer:
CS
Quantity:
182
Part Number:
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Manufacturer:
MOT
Quantity:
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Part Number:
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Manufacturer:
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Part Number:
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Part Number:
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Manufacturer:
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Quantity:
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DESCRIPTION
The 2N4033 is a silicon Planar Epitaxial PNP
transistor in Jedec TO-39 metal case primary
intended for large signal, low noise industrial
applications.
ABSOLUTE MAXIMUM RATINGS
September 2002
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
T
stg
C
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
at T
Parameter
C
amb
C
45
E
= 0)
= 0)
45
B
o
= 0)
C
SMALL SIGNAL PNP TRANSISTOR
o
C
INTERNAL SCHEMATIC DIAGRAM
-55 to 175
Value
175
-80
-80
0.8
-5
-1
TO-39
4
2N4033
Unit
o
o
W
W
V
V
V
A
C
C
1/6

Related parts for 2N4033

2N4033 Summary of contents

Page 1

... DESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I CBO V Collector-Emitter Voltage (I CEO V Emitter-Base Voltage (I EBO I Collector Current C P Total Dissipation at T ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector-Base (BR)CBO Breakdown Voltage ( Collector-Emitter (BR)CEO Breakdown Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... Collector Emitter Saturation Voltage. Transition Frequency. Base Emitter Saturation Voltage. Collector Base Capacitance. 2N4033 3/6 ...

Page 4

... Test Circuit for PULSE GENERATOR : < 1 < 4/6 TO OSCILLOSCOPE : > 100 K IN ...

Page 5

... TO-39 MECHANICAL DATA DIM. MIN. TYP MAX. MIN. 0.500 0.49 6.6 8.5 9.4 0.200 1.2 0 (typ 2N4033 inch TYP. MAX. 0.019 0.260 0.334 0.370 0.047 0.035 A P008B 5/6 ...

Page 6

... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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