BU808DFI STMicroelectronics, BU808DFI Datasheet
BU808DFI
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BU808DFI Summary of contents
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... COMPLIANT) FOR EASY MOUNTING LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 APPLICATIONS COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END INCHES. DESCRIPTION The BU808DFI is a NPN transistor in monolithic Darlington configuration manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V ...
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... BU808DFI THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE INDUCTIVE LOAD t Storage Time s t Fall Time f INDUCTIVE LOAD t Storage Time ...
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... Derating Curve Collector Emitter Saturation Voltage Power Losses at 16 KHz DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load at 16KHz BU808DFI 3/7 ...
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... BU808DFI Switching Time Inductive Load at 16KHZ BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current I has to be provided for the lowest gain 100 C (line scan phase). On the other hand, negative base current I must be provided to B2 turn off the power transistor (retrace phase) ...
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... Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit BU808DFI 5/7 ...
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... BU808DFI ISOWATT218 MECHANICAL DATA DIM. MIN. A 5.35 C 3.30 D 2.90 D1 1.88 E 0.75 F 1.05 F2 1.50 F3 1.90 G 10.80 H 15. 20.80 L2 19.10 L3 22.80 L4 40.50 L5 4.85 L6 20.25 N 2.1 R DIA 3.5 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum The side of the dissipator must be flat within 80 m ...
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