BUL213 STMicroelectronics, BUL213 Datasheet

TRANSISTOR POWER NPN TO-220

BUL213

Manufacturer Part Number
BUL213
Description
TRANSISTOR POWER NPN TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL213

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
600V
Vce Saturation (max) @ Ib, Ic
900mV @ 200mA, 1A
Current - Collector Cutoff (max)
250µA
Dc Current Gain (hfe) (min) @ Ic, Vce
16 @ 350mA, 3V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUL213
Manufacturer:
ST
Quantity:
8 500
Part Number:
BUL213
Manufacturer:
ST
Quantity:
15 000
Part Number:
BUL213-E
Manufacturer:
ST
0
Part Number:
BUL213FP
Manufacturer:
ST
0
Part Number:
BUL213������
Manufacturer:
ST
0
APPLICATIONS
DESCRIPTION
The BUL213 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
February 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
V
V
V
T
P
I
I
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
c
< 5 ms)
= 25
C
p
= 0)
< 5 ms)
o
B
C
o
BE
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
1300
600
150
60
TO-220
9
3
6
2
4
1
2
BUL213
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

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BUL213 Summary of contents

Page 1

... APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL213 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies ...

Page 2

... BUL213 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... Safe Operating Areas DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage BUL213 3/6 ...

Page 4

... BUL213 Reverse Biased SOA 4/6 Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier ...

Page 5

... BUL213 MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 P011CI 5/6 ...

Page 6

... BUL213 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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