2SC4793 Toshiba, 2SC4793 Datasheet
2SC4793
Manufacturer Part Number
2SC4793
Description
TRANS NPN 230V 1A 2-10R1A
Manufacturer
Toshiba
Datasheet
1.2SC4793FM.pdf
(3 pages)
Specifications of 2SC4793
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
230V
Vce Saturation (max) @ Ib, Ic
1.5V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
2W
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
2-10R1A (TO-220 NIS)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC4793
Manufacturer:
TOSHIBA
Quantity:
30 000
Company:
Part Number:
2SC4793
Manufacturer:
TOSHIBA
Quantity:
1 500
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Part Number:
2SC4793
Manufacturer:
TOSHIBA
Quantity:
63
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Part Number:
2SC4793
Manufacturer:
toshiba
Quantity:
30 000
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Part Number:
2SC4793
Manufacturer:
TOSHIBA
Quantity:
11 262
Part Number:
2SC4793
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2SC4793/2SA1837
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Power Amplifier Applications
Driver Stage Amplifier Applications
•
•
Maximum Ratings
Electrical Characteristics
Marking
High transition frequency: f
Complementary to 2SA1837
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Characteristics
Characteristics
C4793
Ta = 25°C
Tc = 25°C
(Tc = 25°C)
TOSHIBA Transistor Silicon NPN Epitaxial Type
T
= 100 MHz (typ.)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Tc = 25°C)
V
V
Symbol
Symbol
(BR) CEO
V
V
V
CE (sat)
I
I
T
V
h
C
CBO
EBO
P
CBO
CEO
EBO
I
I
T
f
stg
FE
BE
C
B
T
ob
C
j
2SC4793
V
V
I
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CB
−55 to 150
= 10 mA, I
= 500 mA, I
Rating
= 5 V, I
= 230 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
230
230
150
0.1
2.0
20
5
1
1
C
C
C
Test Condition
B
C
E
= 0
= 100 mA
= 500 mA
B
E
= 0
= 0, f = 1 MHz
= 100 mA
= 50 mA
= 0
Unit
°C
°C
W
V
V
V
A
A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
230
100
―
―
―
―
―
―
Typ.
100
20
―
―
―
―
―
―
2-10R1A
2004-07-26
2SC4793
―
―
Max
320
1.0
1.0
1.5
1.0
―
―
―
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
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2SC4793 Summary of contents
Page 1
... 100 500 mA (sat 500 100 MHz 2SC4793 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Min Typ. Max Unit ― ― 1.0 µA ― ― 1.0 µA 230 ― ― V 100 ― 320 ― ― 1.5 V ― ― 1.0 V ― ...
Page 2
... I C max (continuous) 1 0.5 DC operation 0 25°C 0.1 0.05 *: Single nonrepetitive pulse Tc = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 1000 Collector-emitter voltage V 2 2SC4793 – −25 Common emitter 0.8 1.0 1.2 1.4 (V) BE – 100°C 25 −25 0.1 0.3 ...
Page 3
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 2SC4793 030619EAA 2004-07-26 ...