MJE13007 ON Semiconductor, MJE13007 Datasheet

TRANS PWR NPN 8A 400V TO220AB

MJE13007

Manufacturer Part Number
MJE13007
Description
TRANS PWR NPN 8A 400V TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MJE13007

Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 2A, 8A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
5 @ 5A, 5V
Power - Max
80W
Frequency - Transition
14MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJE13007OS

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MJE13007G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 6
surface of the package (in a location beneath the die), the device mounted on a
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Emitter Current
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Temperature
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
The MJE13007G is designed for high−voltage, high−speed power
V
Reverse Bias SOA with Inductive Loads @ T
700 V Blocking Capability
SOA and Switching Applications Information
Standard TO−220
These Devices are Pb−Free and are RoHS Compliant*
CEO(sus)
400 V
Characteristics
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
C
= 25_C
Symbol
Symbol
T
V
V
V
R
R
J
I
I
I
P
CEO
EBO
, T
T
CES
CM
BM
EM
I
I
I
qJC
qJA
C
B
E
D
L
stg
C
= 100°C
−65 to 150
Value
0.64
Max
1.56
62.5
400
700
260
9.0
8.0
4.0
8.0
16
12
24
80
1
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
_C
_C
W
MJE13007G
Device
400 VOLTS − 80 WATTS
POWER TRANSISTOR
1
ORDERING INFORMATION
2
A
Y
WW = Work Week
G
3
MARKING DIAGRAM
8.0 AMPERES
http://onsemi.com
= Assembly Location
= Year
= Pb−Free Package
(Pb−Free)
MJE13007G
Package
TO−220
AY WW
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
50 Units / Rail
Shipping
MJE13007/D

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MJE13007 Summary of contents

Page 1

... SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage ( mA Collector Cutoff Current (V = 700 Vdc) CES (V = 700 Vdc 125°C) CES C Emitter Cutoff Current (V ...

Page 3

1 40°C C 0.8 25°C 0.6 100°C 0.4 0.01 0.02 0.05 0.1 0.2 0 COLLECTOR CURRENT (AMPS) C Figure 1. Base−Emitter Saturation Voltage 3 2.5 2 1.5 ...

Page 4

... Figure 8. Forward Bias Power Derating 1 0 0.5 0 0.2 0 0.1 0 0.05 0.07 0. 0.02 0. 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 Figure 9. Typical Thermal Response for MJE13007 ≤ 100° GAIN ≥ 500 100 300 500 1000 V , COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) CEV Figure 7 ...

Page 5

... This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. NOTE: 1. For detailed information on specific switching applications, at rated V CEV CEV see ON Semiconductor Application Note AN719, AN873, AN875, AN951. http://onsemi.com 5 ...

Page 6

Table 1. Test Conditions For Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +15 150 W 100 MTP8P10 MPF930 MUR105 MPF930 +10 V MJE210 50 W 150 W COMMON 3 ...

Page 7

VOLTAGE REQUIREMENTS (continued) In the four application examples (Table 2) load lines are shown in relation to the pulsed forward and reverse biased SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits ...

Page 8

V = 125 B(on) B(off 25°C J 1000 100 COLLECTOR CURRENT (AMP) C Figure 10. ...

Page 9

Table 2. Applications Examples of Switching Circuits CIRCUIT SERIES SWITCHING REGULATOR FLYBACK INVERTER PUSH−PULL INVERTER/CONVERTER SOLENOID DRIVER V CC SOLENOID D LOAD LINE DIAGRAMS ...

Page 10

... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE13007/D ...

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