TRANS PWR NPN 4A 400V TO220AB

MJE13005

Manufacturer Part NumberMJE13005
DescriptionTRANS PWR NPN 4A 400V TO220AB
ManufacturerON Semiconductor
SeriesSWITCHMODE™
MJE13005 datasheet
 

Specifications of MJE13005

Transistor TypeNPNCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic1V @ 1A, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce8 @ 2A, 5VPower - Max2W
Frequency - Transition4MHzMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Current - Collector Cutoff (max)-Other namesMJE13005OS
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MJE13005G
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
V
400 V
CEO(sus)
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 2 to 4 A, 25 and 100_C t
100_C is 180 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T
= 25_C
A
Derate above 25°C
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 9
= 100_C
C
@ 3A,
c
Symbol
Value
Unit
V
400
Vdc
CEO(sus)
V
700
Vdc
CEV
V
9
Vdc
EBO
I
4
Adc
C
I
8
CM
I
2
Adc
B
I
4
BM
I
6
Adc
E
I
12
EM
P
2
W
D
0.016
W/_C
P
75
W
D
0.6
W/_C
T
, T
−65 to
_C
J
stg
+150
Symbol
Max
Unit
R
62.5
_C/W
qJA
R
1.67
_C/W
qJC
T
275
_C
Device
L
MJE13005G
1
http://onsemi.com
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
MJE13005G
AY WW
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
TO−220
50 Units / Rail
(Pb−Free)
Publication Order Number:
MJE13005/D

MJE13005 Summary of contents

  • Page 1

    ... Device L MJE13005G 1 http://onsemi.com 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS TO−220AB CASE 221A−09 STYLE MARKING DIAGRAM MJE13005G Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Package Shipping TO−220 50 Units / Rail (Pb−Free) Publication Order Number: MJE13005/D ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

  • Page 3

    T = 150° 25° 55° 0.1 0.2 0.4 0.6 0.04 0. COLLECTOR CURRENT (AMP) C Figure 1. DC ...

  • Page 4

    I CPK 90% V clamp 10 90 TIME Figure 7. Inductive Switching Measurements Table 1. Typical Inductive Switching Performance Î Î Î Î Î Î Î Î Î ...

  • Page 5

    Table 2. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 0.001 DUTY CYCLE ≤ 10% 68 ≤ ...

  • Page 6

    ... Figure 12 gives the complete RBSOA characteristics. SECOND BREAKDOWN DERATING THERMAL DERATING 100 120 T , CASE TEMPERATURE (°C) C Figure 13. Forward Bias Power Derating http://onsemi.com 6 ≤ 100° 2 BE(off) MJE13005 200 300 400 500 600 700 , COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) 140 160 1.5 V 800 ...

  • Page 7

    ... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE13005/D ...