TRANS PWR NPN 10A 60V TO220AB

MJE3055T

Manufacturer Part NumberMJE3055T
DescriptionTRANS PWR NPN 10A 60V TO220AB
ManufacturerON Semiconductor
MJE3055T datasheet
 


Specifications of MJE3055T

Transistor TypeNPNCurrent - Collector (ic) (max)10A
Voltage - Collector Emitter Breakdown (max)60VVce Saturation (max) @ Ib, Ic8V @ 3.3A, 10A
Current - Collector Cutoff (max)700µADc Current Gain (hfe) (min) @ Ic, Vce20 @ 4A, 4V
Power - Max75WFrequency - Transition2MHz
Mounting TypeThrough HolePackage / CaseTO-220-3 (Straight Leads)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther namesMJE3055TOS
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MJE2955T (PNP)
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
DC Current Gain Specified to 10 A
High Current Gain − Bandwidth Product −
f
= 2.0 MHz (Min) @ I
T
C
= 500 mAdc
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
January, 2010 − Rev. 9
Symbol
Value
Unit
V
60
Vdc
CEO
V
70
Vdc
CB
V
5.0
Vdc
EB
I
10
Adc
C
I
6.0
Adc
B
P
75
W
D
(Note 1)
0.6
W/°C
T
, T
−55 to +150
°C
J
stg
Symbol
Max
Unit
1.67
°C/W
q
JC
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
1
http://onsemi.com
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
MJExx55TG
AY WW
MJExx55T = Device Code
xx = 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Publication Order Number:
MJE2955T/D

MJE3055T Summary of contents

  • Page 1

    ... MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified • High Current Gain − Bandwidth Product − 2.0 MHz (Min 500 mAdc • Pb−Free Packages are Available* ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

  • Page 3

    ... J 1.0 0.8 V BE(sat) 0.6 0.4 0.2 V CE(sat) 0 2.0 3.0 5.0 10 0.1 Figure 4. “On” Voltages Package TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) http://onsemi.com 3 MJE3055T MJE2955T 50 75 100 125 150 T , CASE TEMPERATURE (°C) C Figure 3. Power Derating @ 2 0.2 0.3 ...

  • Page 4

    ... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...