2N3055H ON Semiconductor, 2N3055H Datasheet

2N3055H

Manufacturer Part Number

2N3055H

Description

TRANSISTOR NPN 60V 15A BIPO TO-3

Manufacturer

ON Semiconductor

Datasheet

1.2N3055H.pdf (4 pages)

Specifications of 2N3055H

Transistor Type

NPN

Current - Collector (ic) (max)

15A

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

3V @ 3.3A, 10A

Current - Collector Cutoff (max)

700µA

Dc Current Gain (hfe) (min) @ Ic, Vce

20 @ 4A, 4V

Power - Max

115W

Frequency - Transition

2.5MHz

Mounting Type

Chassis Mount

Package / Case

TO-204, TO-3

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Current page: 1 of 4
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Î Î Î Î Î Î Î Î Î Î Î Î

2N3055, MJ2955

Complementary Silicon

Power Transistors

applications.

April, 2004 − Rev. 4

MAXIMUM RATINGS

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

Base Current

Total Power Dissipation @ T

Derate above 25 C

Operating and Storage Junction Tempera-

ture Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

. . . designed for general−purpose switching and amplifier

DC Current Gain − h

Collector−Emitter Saturation Voltage −

Excellent Safe Operating Area

Pb−Free Package is Available

Semiconductor Components Industries, LLC, 2004

160

140

120

100

CE(sat)

Characteristic

= 1.1 Vdc (Max) @ I

Rating

Figure 1. Power Derating

, CASE TEMPERATURE ( C)

= 20 −70 @ I

Preferred Device

= 25 C

100

= 4 Adc

125

Î Î Î

Symbol

= 4 Adc

, T

150

CEO

CER

qJC

stg

Î Î Î Î Î

175

– 65 to + 200

Value

0.657

Max

1.52

100

115

200

Î Î

Î Î Î Î

Î Î

W/ C

Unit

Vdc

Adc

C/W

Preferred devices are recommended choices for future use

and best overall value.

2N3055

2N3055G

2N3055H

MJ2955

†For information on tape and reel specifications,

*For additional information on our Pb−Free strategy

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

COMPLEMENTARY SILICON

Device

TO−204AA (TO−3)

POWER TRANSISTORS

xxxx55 = Device Code

ORDERING INFORMATION

CASE 1−07

http://onsemi.com

= Assembly Location

= Year

= Work Week

= 1, 2, or 3

xxxx= 2N3055 or MJ2955

TO−204AA

(Pb−Free)

Package

115 W

15 A

60 V

Publication Order Number:

MARKING

DIAGRAM

100 Units / Tray

1 Units / Tubes

YYWW

xxxx55

Shipping

2N3055/D

†

Related parts for 2N3055H

2N3055H Summary of contents

Page 1

... Shipping 2N3055 TO−204AA 100 Units / Tray 2N3055G TO−204AA 1 Units / Tubes (Pb−Free) 2N3055H TO−204AA 100 Units / Tray MJ2955 TO−204AA 100 Units / Tray †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb− ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 3

T = 150 C J 200 25 C 100 − 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3 COLLECTOR CURRENT (AMP) C Figure 3. DC Current Gain, 2N3055 ...

Page 4

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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