2N3055HG ON Semiconductor, 2N3055HG Datasheet - Page 3

• Manufacturer Part Number: 2N3055HG
• Description: TRANSISTOR NPN 60V 15A BIPO TO-3
• Manufacturer: ON Semiconductor

Specifications of 2N3055HG

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 3V @ 3.3A, 10A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 115W
• Frequency - Transition: 2.5MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

500
300
200
100
7.0
5.0
2.0
1.6
1.2
0.8
0.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
50
30
20
10
0
0
5.0
0.1
0.1
T
J
Figure 3. DC Current Gain, 2N3055 (NPN)
10
= 25 C
V
V
Figure 7. “On” Voltages, 2N3055 (NPN)
Figure 5. Collector Saturation Region,
CE(sat)
T
BE(sat)
0.2 0.3
0.2 0.3
J
I
V
I
C
C
= 150 C
BE
, COLLECTOR CURRENT (AMPERES)
= 1.0 A
20
−55 C
I
C
@ V
25 C
@ I
@ I
, COLLECTOR CURRENT (AMP)
C
C
CE
I
/I
/I
B
B
B
50
, BASE CURRENT (mA)
= 4.0 V
= 10
= 10
0.5 0.7 1.0
0.5 0.7 1.0
2N3055 (NPN)
100
4.0 A
200
2.0
2.0 3.0
500
8.0 A
3.0
1000 2000
V
CE
T
J
5.0
5.0
2N3055, MJ2955
= 4.0 V
= 25 C
http://onsemi.com
7.0
7.0
5000
10
10
3
200
100
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
70
50
30
20
10
0
0
5.0
0.1
0.1
T
V
−55 C
J
Figure 4. DC Current Gain, MJ2955 (PNP)
BE
10
= 25 C
Figure 6. Collector Saturation Region,
25 C
@ V
0.2
Figure 8. “On” Voltages, MJ2955 (PNP)
0.2
I
C
V
20
CE
BE(sat)
I
= 1.0 A
C
0.3
, COLLECTOR CURRENT (AMP)
= 4.0 V
I
C
0.3
I
, COLLECTOR CURRENT (AMP)
B
@ I
V
, BASE CURRENT (mA)
50
CE(sat)
0.5 0.7 1.0
C
MJ2955 (PNP)
/I
0.5
B
= 10
100
@ I
T
J
= 150 C
4.0 A
C
/I
1.0
B
200
= 10
2.0
2.0 3.0
500
8.0 A
1000 2000
3.0
V
CE
T
5.0
J
= 4.0 V
5.0
= 25 C
7.0
5000
10
10