2N5401ZL1G ON Semiconductor, 2N5401ZL1G Datasheet

TRANS SS PNP 150V 600MA TO-92

2N5401ZL1G

Manufacturer Part Number
2N5401ZL1G
Description
TRANS SS PNP 150V 600MA TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2N5401ZL1G

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
2N5400, 2N5401
Amplifier Transistors
PNP Silicon
Features
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 1
MAXIMUM RATINGS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
THERMAL CHARACTERISTICS
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
Total Device Dissipation
Operating and Storage Junction
Thermal Resistance,
Thermal Resistance,
Pb−Free Packages are Available*
Derate above 25°C
Derate above 25°C
Temperature Range
Junction−to−Ambient
Junction−to−Case
@ T
@ T
A
C
= 25°C
= 25°C
Characteristic
Rating
Preferred Device
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJC
C
D
D
stg
2N5400 2N5401
120
130
−55 to +150
Max
83.3
600
625
200
5.0
5.0
1.5
12
150
160
1
mW/°C
mW/°C
mAdc
Watts
°C/W
°C/W
Unit
Unit
mW
Vdc
Vdc
Vdc
°C
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy
Preferred devices are recommended choices for future use
and best overall value.
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
A
Y
WW
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
1 2
MARKING DIAGRAM
BASE
3
http://onsemi.com
2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
COLLECTOR
AYWWG
540x
EMITTER
2N
G
Publication Order Number:
3
CASE 29
1
STYLE 1
TO−92
2N5400/D

Related parts for 2N5401ZL1G

2N5401ZL1G Summary of contents

Page 1

... See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (1) Collector−Emitter Breakdown Voltage (I = 1.0 mAdc Collector−Base Breakdown Voltage = 100 mAdc Emitter−Base Breakdown Voltage = 10 mAdc ...

Page 3

T = 125°C J 100 25° −55° 0.1 0.2 0.3 0.5 1.0 0.9 0.8 0 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 Figure 2. Collector ...

Page 4

T = 25°C J 0.9 0.8 0 BE(sat 0.6 0.5 0.4 0.3 0 CE(sat 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 ...

Page 5

... Tape and Reel Packaging Specifica- tions Brochure, BRD8011/D. 2N5400, 2N5401 Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb− ...

Page 6

... ISSUE SECTION X−X N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Related keywords