BC818-40LT1 ON Semiconductor, BC818-40LT1 Datasheet

BC818-40LT1

Manufacturer Part Number

BC818-40LT1

Description

TRANSISTOR NPN 25V 500MA SOT-23

Manufacturer

ON Semiconductor

Datasheet

1.BC818-40LT1G.pdf (4 pages)

Specifications of BC818-40LT1

Transistor Type

NPN

Current - Collector (ic) (max)

500mA

Voltage - Collector Emitter Breakdown (max)

25V

Vce Saturation (max) @ Ib, Ic

700mV @ 50mA, 500mA

Dc Current Gain (hfe) (min) @ Ic, Vce

250 @ 100mA, 1V

Power - Max

225mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Current - Collector Cutoff (max)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BC818-40LT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

BC818-40LT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

BC818-40LT1G

Quantity:

81 000

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BC818-40LT1G

General Purpose

Transistors

NPN Silicon

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

August, 2009 − Rev. 2

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector −Emitter Voltage

Collector −Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

Total Device Dissipation FR− 5 Board,

(Note 1) T

Thermal Resistance,

Total Device Dissipation

Alumina Substrate, (Note 2) T

Thermal Resistance,

Junction and Storage Temperature

Compliant

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Derate above 25°C

Junction−to−Ambient

Characteristic

= 25°C

Rating

Derate above 25°C

= 25°C

Symbol

CEO

CBO

EBO

, T

qJA

stg

−55 to +150

Value

Max

500

225

556

300

417

5.0

1.8

2.4

mW/°C

mAdc

°C/W

Unit

°C

BC818−40LT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

MARKING DIAGRAMS

BASE

http://onsemi.com

= Specific Device Code

= Date Code*

= Pb−Free Package

(Pb−Free)

Package

SOT−23

CASE 318

STYLE 6

SOT−23

6G M G

COLLECTOR

EMITTER

Publication Order Number:

3000 / Tape & Reel

Shipping

BC818−40LT/D

†

Related parts for BC818-40LT1

BC818-40LT1 Summary of contents

Page 1

... BC818-40LT1G General Purpose Transistors NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 25° ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C Collector −Emitter Breakdown Voltage ( −10 mA Emitter−Base Breakdown Voltage (I = −1.0 mA) E Collector Cutoff Current (V ...

Page 3

T = 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 2. Saturation Region +1 q for V VC CE(sat ...

Page 4

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC818−40LT1/D ...

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