BU323Z ON Semiconductor, BU323Z Datasheet

TRANS DARL NPN 350V 10A TO-218

BU323Z

Manufacturer Part Number
BU323Z
Description
TRANS DARL NPN 350V 10A TO-218
Manufacturer
ON Semiconductor
Datasheet

Specifications of BU323Z

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
1.7V @ 250mA, 10A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 5A, 4.6V
Power - Max
150W
Frequency - Transition
2MHz
Mounting Type
Through Hole
Package / Case
SOT-93, TO-218 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU323ZG
Manufacturer:
TOSHIBA
Quantity:
20 000
Part Number:
BU323ZG
Manufacturer:
ON
Quantity:
30 000
BU323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control, and
exhibit the following main features:
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 14
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Sustaining Voltage
Collector−Emitter Voltage
Collector Current
Base Current
Total Power Dissipation @ T
Derate above 25_C
Operating and Storage Junction Temperature
Range
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
The BU323Z is a planar, monolithic, high−voltage power
Integrated High−Voltage Active Clamp
Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Clamping Energy Capability 100% Tested in a Live
High DC Current Gain/Low Saturation Voltages
Design Guarantees Operation in SOA at All Times
Offered in Plastic SOT−93/TO−218 Type or
Pb−Free Packages are Available*
Over the −40°C to +125°C Temperature Range
Ignition Circuit
Specified Over Full Temperature Range
TO−220 Packages
Characteristic
Rating
− Continuous
− Peak
− Continuous
− Peak
C
= 25_C
Symbol
Symbol
T
V
V
R
J
I
I
P
CEO
EBO
, T
T
CM
BM
I
I
qJC
C
B
D
L
stg
–65 to
+175
Max
Max
350
150
260
6.0
3.0
6.0
1.0
1.0
10
20
1
W/_C
_C/W
Unit
Unit
Vdc
Vdc
Adc
Adc
_C
_C
W
BU323Z
BU323ZG
1
10 AMPERE DARLINGTON
Device
2
360 − 450 VOLTS CLAMP,
A
Y
WW
G
BU323Z
3
ORDERING INFORMATION
AUTOPROTECTED
http://onsemi.com
BASE
150 WATTS
1
4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Device Code
CASE 340D
COLLECTOR 2,4
STYLE 1
SOT−93
(Pb−Free)
Package
CLAMP
SOT−93
SOT−93
360 V
EMITTER 3
Publication Order Number:
30 Units / Rail
30 Units / Rail
MARKING
DIAGRAM
Shipping
BU323ZG
BU323Z/D
AYWW

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BU323Z Summary of contents

Page 1

... BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: • ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (1) Collector−Emitter Clamping Voltage ( − 40°C to +125°C) C Collector−Emitter Cutoff Current (V = 200 Emitter−Base Leakage Current (V = 6.0 Vdc, ...

Page 3

... Curve Shape design, the BU323Z has a built−in avalanche diode and a special high voltage driving circuit. During an auto−protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition ...

Page 4

... CPEAK ( CPEAK (d) Figure 4. Energy Test Criteria for BU323Z The shaded area represents the amount of energy the device can sustain, under given DC biases (I I HIGH without an external clamp; see the test schematic dia- BE gram, Figure 2. The transistor PASSES the Energy test if, for the inductive ...

Page 5

T = 125°C J 1000 100 25° 1 100 1000 I , COLLECTOR CURRENT (MILLIAMPS) C Figure 5. DC Current Gain 5.0 4 4.0 3 3.0 8 ...

Page 6

... Q 4.00 4.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF V 1.75 REF 0.069 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BU323Z/D ...

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