TRANS DARL NPN 350V 10A TO-218

BU323Z

Manufacturer Part NumberBU323Z
DescriptionTRANS DARL NPN 350V 10A TO-218
ManufacturerON Semiconductor
BU323Z datasheet
 


Specifications of BU323Z

Transistor TypeNPN - DarlingtonCurrent - Collector (ic) (max)10A
Voltage - Collector Emitter Breakdown (max)350VVce Saturation (max) @ Ib, Ic1.7V @ 250mA, 10A
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce500 @ 5A, 4.6V
Power - Max150WFrequency - Transition2MHz
Mounting TypeThrough HolePackage / CaseSOT-93, TO-218 (Straight Leads)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant  
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BU323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control, and
exhibit the following main features:
Integrated High−Voltage Active Clamp
Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the −40°C to +125°C Temperature Range
Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
Design Guarantees Operation in SOA at All Times
Offered in Plastic SOT−93/TO−218 Type or
TO−220 Packages
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Emitter Voltage
Collector Current
− Continuous
− Peak
Base Current
− Continuous
− Peak
Total Power Dissipation @ T
= 25_C
C
Derate above 25_C
Operating and Storage Junction Temperature
Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 14
10 AMPERE DARLINGTON
Symbol
Max
Unit
V
350
Vdc
CEO
V
6.0
Vdc
EBO
I
10
Adc
C
I
20
CM
I
3.0
Adc
B
I
6.0
BM
P
150
W
D
1.0
W/_C
T
, T
–65 to
_C
J
stg
+175
1
2
Symbol
Max
Unit
R
1.0
_C/W
qJC
T
260
_C
L
Device
BU323Z
BU323ZG
1
http://onsemi.com
AUTOPROTECTED
360 − 450 VOLTS CLAMP,
150 WATTS
360 V
CLAMP
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
4
DIAGRAM
SOT−93
AYWW
CASE 340D
BU323ZG
STYLE 1
3
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
BU323Z
= Device Code
ORDERING INFORMATION
Package
Shipping
SOT−93
30 Units / Rail
SOT−93
30 Units / Rail
(Pb−Free)
Publication Order Number:
BU323Z/D

BU323Z Summary of contents

  • Page 1

    ... BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: • ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (1) Collector−Emitter Clamping Voltage ( − 40°C to +125°C) C Collector−Emitter Cutoff Current (V = 200 Emitter−Base Leakage Current (V = 6.0 Vdc, ...

  • Page 3

    ... Curve Shape design, the BU323Z has a built−in avalanche diode and a special high voltage driving circuit. During an auto−protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition ...

  • Page 4

    ... CPEAK ( CPEAK (d) Figure 4. Energy Test Criteria for BU323Z The shaded area represents the amount of energy the device can sustain, under given DC biases (I I HIGH without an external clamp; see the test schematic dia- BE gram, Figure 2. The transistor PASSES the Energy test if, for the inductive ...

  • Page 5

    T = 125°C J 1000 100 25° 1 100 1000 I , COLLECTOR CURRENT (MILLIAMPS) C Figure 5. DC Current Gain 5.0 4 4.0 3 3.0 8 ...

  • Page 6

    ... Q 4.00 4.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF V 1.75 REF 0.069 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BU323Z/D ...