BU323Z ON Semiconductor, BU323Z Datasheet
BU323Z
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BU323Z Summary of contents
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... BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: • ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS (1) Collector−Emitter Clamping Voltage ( − 40°C to +125°C) C Collector−Emitter Cutoff Current (V = 200 Emitter−Base Leakage Current (V = 6.0 Vdc, ...
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... Curve Shape design, the BU323Z has a built−in avalanche diode and a special high voltage driving circuit. During an auto−protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition ...
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... CPEAK ( CPEAK (d) Figure 4. Energy Test Criteria for BU323Z The shaded area represents the amount of energy the device can sustain, under given DC biases (I I HIGH without an external clamp; see the test schematic dia- BE gram, Figure 2. The transistor PASSES the Energy test if, for the inductive ...
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T = 125°C J 1000 100 25° 1 100 1000 I , COLLECTOR CURRENT (MILLIAMPS) C Figure 5. DC Current Gain 5.0 4 4.0 3 3.0 8 ...
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... Q 4.00 4.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF V 1.75 REF 0.069 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BU323Z/D ...