TRANS DARL NPN 350V 10A TO-218

BU323Z

Manufacturer Part NumberBU323Z
DescriptionTRANS DARL NPN 350V 10A TO-218
ManufacturerON Semiconductor
BU323Z datasheet
 


Specifications of BU323Z

Transistor TypeNPN - DarlingtonCurrent - Collector (ic) (max)10A
Voltage - Collector Emitter Breakdown (max)350VVce Saturation (max) @ Ib, Ic1.7V @ 250mA, 10A
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce500 @ 5A, 4.6V
Power - Max150WFrequency - Transition2MHz
Mounting TypeThrough HolePackage / CaseSOT-93, TO-218 (Straight Leads)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant  
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I
C
I
CPEAK
(a)
I
C
I
CPEAK
(b)
I
C
I
CPEAK
(c)
I
C
I
CPEAK
(d)
Figure 4. Energy Test Criteria for BU323Z
The shaded area represents the amount of energy the
device can sustain, under given DC biases (I
I
HIGH
C
R
), without an external clamp; see the test schematic dia-
BE
gram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and I
/I
/V
CPEAK
B
the shaded area and greater than the V
Figure 4a.
I
LOW
C
V
CE
V
MIN
GATE
I
HIGH
C
I
LOW
C
V
CE
V
MIN
The transistor FAILS if the V
GATE
(minimum limit) at any point along the V
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
I
HIGH
C
energy level required.
I
LOW
C
V
CE
V
MIN
GATE
I
HIGH
C
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the V
I
LOW
C
V
CE
V
MIN
GATE
http://onsemi.com
4
/I
/V
/
C
B
BE(off)
biases, the V
remains outside
BE(off)
CE
minimum limit,
GATE
is less than the V
CE
GATE
/I
curve as
CE
C
value, Figure 4d.
GATE