BU323Z ON Semiconductor, BU323Z Datasheet - Page 5

• Manufacturer Part Number: BU323Z
• Description: TRANS DARL NPN 350V 10A TO-218
• Manufacturer: ON Semiconductor

Specifications of BU323Z

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1.7V @ 250mA, 10A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 5A, 4.6V
• Power - Max: 150W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

10000
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
0
100
0.1
1
Figure 9. Base−Emitter Saturation Voltage
I
C
Figure 7. Collector Saturation Region
/I
I
C
5 A
B
= 3 A
= 150
I
C
, COLLECTOR CURRENT (MILLIAMPS)
Figure 5. DC Current Gain
I
C
I
B
, COLLECTOR CURRENT (AMPS)
, BASE CURRENT (MILLIAMPS)
7 A
8 A
V
CE
1000
10
= 1.5 V
T
1
J
= 125°C
10 A
25°C
T
J
= 25°C
-40°C
125°C
T
J
= 25°C
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10000
100
10
5
10000
1000
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
100
0.1
0.1
Figure 8. Collector−Emitter Saturation Voltage
TYP + 6Σ
V
I
C
Figure 10. Base−Emitter “ON” Voltages
CE
/I
B
= 2 VOLTS
= 150
I
C
, COLLECTOR CURRENT (MILLIAMPS)
Figure 6. DC Current Gain
I
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
25°C
1000
T
J
= 25°C
V
TYPICAL
CE
= 5 V, T
1
1
TYP - 6Σ
J
= 25°C
10000
125°C
T
J
= 125°C
100000
10
10