BU323Z ON Semiconductor, BU323Z Datasheet - Page 6

• Manufacturer Part Number: BU323Z
• Description: TRANS DARL NPN 350V 10A TO-218
• Manufacturer: ON Semiconductor

Specifications of BU323Z

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1.7V @ 250mA, 10A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 5A, 4.6V
• Power - Max: 150W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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G
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4
3
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N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
J
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SOT−93 (TO−218)
http://onsemi.com
CASE 340D−02
C
ISSUE E
6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETER.
Y14.5M, 1982.
STYLE 1:
DIM
A
B
C
D
E
G
H
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J
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PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
14.70
17.80
MILLIMETERS
MIN
4.70
1.10
1.17
5.40
2.00
0.50
4.00
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
31.00 REF
1.75 REF
4.00 REF
20.35
15.20
16.20
18.20
MAX
4.90
1.30
1.37
5.55
3.00
0.78
4.10
0.579
0.185
0.043
0.046
0.213
0.079
0.020
0.158
0.701
MIN
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1.220 REF
0.157 REF
INCHES
0.069
MAX
0.801
0.598
0.193
0.051
0.054
0.219
0.118
0.031
0.638
0.161
0.717
BU323Z/D