MJW21192 (NPN),
MJW21191 (PNP)
Complementary Silicon
Plastic Power Transistors
Specifically designed for power audio output, or high power drivers
in audio amplifiers.
•
DC Current Gain Specified up to 8.0 A at Temperature
•
All On Characteristics at Temperature
•
High SOA: 20 A, 18 V, 100 ms
•
TO−247AE Package
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Base Current
Total Power Dissipation @ T
= 25_C
C
Derate above 25_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1000
PNP
NPN
100
10
1.0
1.0
10
V
, REVERSE VOLTAGE (V)
R
Figure 1. Typical Capacitance @ 25°C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 3
MJW21191
MJW21192
Symbol
Unit
V
150
Vdc
CEO
V
150
Vdc
CB
V
5.0
Vdc
EB
I
8.0
Adc
C
16
I
2.0
Adc
B
P
125
W
D
0.65
W/_C
T
, T
– 65 to
_C
J
stg
+ 150
Symbol
Max
Unit
R
1.0
_C/W
qJC
R
50
_C/W
qJA
MJW21191
MJW21191G
MJW21192
100
1000
MJW21192G
1
http://onsemi.com
8.0 A
POWER TRANSISTORS
COMPLEMENTARY SILICON
150 V, 125 W
TO−247
CASE 340L
STYLE 3
1 2 3
MARKING DIAGRAM
MJW2119x
AYWWG
1 BASE
3 EMITTER
2 COLLECTOR
x
= 1 or 2
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
TO−247
30 Units/Rail
TO−247
30 Units/Rail
(Pb−Free)
TO−247
30 Units/Rail
TO−247
30 Units/Rail
(Pb−Free)
Publication Order Number:
MJW21192/D