MPS2222ARL ON Semiconductor, MPS2222ARL Datasheet - Page 2

TRANSISTOR NPN GP SS 40V TO-92

MPS2222ARL

Manufacturer Part Number
MPS2222ARL
Description
TRANSISTOR NPN GP SS 40V TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of MPS2222ARL

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-

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1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
Collector Cutoff Current
Emitter Cutoff Current (V
Base Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (Note 1)
Base −Emitter Saturation Voltage (Note 1)
Current −Gain − Bandwidth Product (Note 2)
Output Capacitance (V
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
Collector Base Time Constant
Noise Figure
T
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
is defined as the frequency at which |h
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
E
C
CB
CB
CB
CB
EB
= 10 mAdc, I
= 10 mAdc, I
= 10 mAdc, I
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 10 mAdc, V
= 150 mAdc, V
= 150 mAdc, V
= 500 mAdc, V
= 150 mAdc, I
= 500 mAdc, I
= 150 mAdc, I
= 500 mAdc, I
= 20 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 20 mAdc, V
= 100 mAdc, V
= 0.5 Vdc, I
= 50 Vdc, I
= 60 Vdc, I
= 50 Vdc, I
= 50 Vdc, I
C
E
B
E
E
E
E
CE
CE
CE
C
CE
CE
CE
CE
CB
= 0)
= 0)
B
B
B
B
CE
CE
CE
CE
CE
CE
CE
= 0)
= 0)
= 0)
= 0, T
= 0, T
CE
CE
CE
= 0, f = 1.0 MHz)
= 15 mAdc)
= 50 mAdc)
= 15 mAdc)
= 50 mAdc)
CE
CB
= 10 Vdc)
= 10 Vdc, T
= 20 Vdc, f = 100 MHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 20 Vdc, f = 31.8 MHz)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, R
EB
= 10 Vdc) (Note 1)
= 1.0 Vdc) (Note 1)
= 10 Vdc) (Note 1)
= 60 Vdc, V
= 10 Vdc, I
CE
A
A
= 3.0 Vdc, I
= 125°C)
= 125°C)
= 60 Vdc, V
Characteristic
A
S
= −55°C)
E
EB(off)
= 1.0 kW, f = 1.0 kHz)
= 0, f = 1.0 MHz)
C
(T
EB(off)
= 0)
fe
A
= 3.0 Vdc)
| extrapolates to unity.
= 25°C unless otherwise noted)
= 3.0 Vdc)
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V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
rb′C
I
I
CE(sat)
BE(sat)
C
I
C
h
CEX
CBO
EBO
h
I
h
h
NF
h
f
BL
obo
FE
ibo
T
oe
ie
re
fe
c
0.25
Min
100
250
300
5.0
6.0
0.6
2.0
5.0
30
40
60
75
35
50
75
35
50
30
40
50
75
25
Max
0.01
0.01
1.25
100
300
300
375
200
150
0.4
0.3
1.6
1.0
1.3
1.2
2.6
2.0
8.0
8.0
8.0
4.0
4.0
10
10
10
20
30
25
35
X 10
mmhos
nAdc
mAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF
pF
dB
ps
− 4

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