MPS2222RLRM ON Semiconductor, MPS2222RLRM Datasheet - Page 2

• Manufacturer Part Number: MPS2222RLRM
• Description: TRANSISTOR NPN GP SS 30V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPS2222RLRM

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
Collector Cutoff Current
Emitter Cutoff Current (V
Base Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (Note 1)
Base −Emitter Saturation Voltage (Note 1)
Current −Gain − Bandwidth Product (Note 2)
Output Capacitance (V
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
Collector Base Time Constant
Noise Figure
T
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
is defined as the frequency at which |h
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
E
C
CB
CB
CB
CB
EB
= 10 mAdc, I
= 10 mAdc, I
= 10 mAdc, I
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 10 mAdc, V
= 150 mAdc, V
= 150 mAdc, V
= 500 mAdc, V
= 150 mAdc, I
= 500 mAdc, I
= 150 mAdc, I
= 500 mAdc, I
= 20 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 20 mAdc, V
= 100 mAdc, V
= 0.5 Vdc, I
= 50 Vdc, I
= 60 Vdc, I
= 50 Vdc, I
= 50 Vdc, I
C
E
B
E
E
E
E
CE
CE
CE
C
CE
CE
CE
CE
CB
= 0)
= 0)
B
B
B
B
CE
CE
CE
CE
CE
CE
CE
= 0)
= 0)
= 0)
= 0, T
= 0, T
CE
CE
CE
= 0, f = 1.0 MHz)
= 15 mAdc)
= 50 mAdc)
= 15 mAdc)
= 50 mAdc)
CE
CB
= 10 Vdc)
= 10 Vdc, T
= 20 Vdc, f = 100 MHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 20 Vdc, f = 31.8 MHz)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, R
EB
= 10 Vdc) (Note 1)
= 1.0 Vdc) (Note 1)
= 10 Vdc) (Note 1)
= 60 Vdc, V
= 10 Vdc, I
CE
A
A
= 3.0 Vdc, I
= 125°C)
= 125°C)
= 60 Vdc, V
Characteristic
A
S
= −55°C)
E
EB(off)
= 1.0 kW, f = 1.0 kHz)
= 0, f = 1.0 MHz)
C
(T
EB(off)
= 0)
fe
A
= 3.0 Vdc)
| extrapolates to unity.
= 25°C unless otherwise noted)
= 3.0 Vdc)
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V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
rb′C
I
I
CE(sat)
BE(sat)
C
I
C
h
CEX
CBO
EBO
h
I
h
h
NF
h
f
BL
obo
FE
ibo
T
oe
ie
re
fe
c
0.25
Min
100
250
300
5.0
6.0
0.6
2.0
5.0
30
40
60
75
35
50
75
35
50
30
40
50
75
25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.01
0.01
1.25
100
300
300
375
200
150
0.4
0.3
1.6
1.0
1.3
1.2
2.6
2.0
8.0
8.0
8.0
4.0
4.0
10
10
10
20
30
25
35
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
mAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF
pF
dB
ps
−
−
− 4