MPS2369RLRAG ON Semiconductor, MPS2369RLRAG Datasheet

MPS2369RLRAG

Manufacturer Part Number

MPS2369RLRAG

Description

TRANSISTOR SW NPN 15V TO-92

Manufacturer

ON Semiconductor

Datasheet

1.MPS2369.pdf (4 pages)

Specifications of MPS2369RLRAG

Transistor Type

NPN

Current - Collector (ic) (max)

200mA

Voltage - Collector Emitter Breakdown (max)

15V

Vce Saturation (max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (max)

400nA

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 10mA, 1V

Power - Max

625mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

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NPN Silicon

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

June, 2001 – Rev. 2

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Total Device Dissipation @ T A = 25 C

Operating and Storage Junction

Thermal Resistance, Junction to Ambient

Collector–Emitter Breakdown Voltage (1)

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

Semiconductor Components Industries, LLC, 2001

Derate above 25 C

Temperature Range

(I C = 10 mAdc, I B = 0)

(I C = 10 Adc, V BE = 0)

(I C = 10 mAdc, I E = 0)

(I E = 10 mAdc, I C = 0)

(V CB = 20 Vdc, I E = 0)

(V CB = 20 Vdc, I E = 0, T A = 125 C)

(V CE = 20 Vdc, V BE = 0)

Characteristic

Rating

Characteristic

(T A = 25 C unless otherwise noted)

Symbol

T J , T stg

Symbol

V CEO

V CBO

V EBO

V CES

R qJA

P D

I C

MPS2369A

MPS2369,A

–55 to +150

Value

Max

200

625

200

4.5

5.0

V (BR)CEO

V (BR)CBO

V (BR)EBO

V (BR)CES

Symbol

I CBO

I CES

mW/ C

mAdc

Unit

Vdc

C/W

Min

4.5

—

*ON Semiconductor Preferred Device

CASE 29–11, STYLE 1

Typ

—

TO–92 (TO–226AA)

Publication Order Number:

Max

0.4

—

MPS2369/D

Unit

Vdc

Adc

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MPS2369RLRAG Summary of contents

Page 1

... Collector Cutoff Current ( Vdc Vdc 125 C) Collector Cutoff Current ( Vdc Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 2 Symbol Value V CEO ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS DC Current Gain ( mAdc 1.0 Vdc mAdc 1.0 Vdc – mAdc, V ...

Page 3

MPS2369 MPS2369A Figure Circuit Figure 2. t off Circuit Figure 3. Storage Test Circuit *Total shunt capacitance of test jig and connectors. http://onsemi.com 3 ...

Page 4

... TO–92 (TO–226) CASE 29–11 ISSUE SECTION X–X JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. ...

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