MSB1218A-RT1 ON Semiconductor, MSB1218A-RT1 Datasheet
MSB1218A-RT1
Manufacturer Part Number
MSB1218A-RT1
Description
TRANS PNP GP 100MA 45V SOT-323
Manufacturer
ON Semiconductor
Datasheet
1.MSB1218A-RT1G.pdf
(4 pages)
Specifications of MSB1218A-RT1
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
500mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
210 @ 2mA, 10V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MSB1218A-RT1
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
MSB1218A-RT1G
Manufacturer:
ON Semiconductor
Quantity:
26 786
Company:
Part Number:
MSB1218A-RT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MSB1218A-RT1G
Manufacturer:
LATTICE
Quantity:
40
MSB1218A- - RT1G
PNP Silicon General
Purpose Amplifier
Transistor
purpose amplifier applications. This device is housed in the
SC- -70/SOT- -323 package which is designed for low power surface
mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using the
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
Semiconductor Components Industries, LLC, 2010
October, 2010 - - Rev. 7
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Collector--Base Voltage
Collector--Emitter Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Collector Current -- Peak
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Collector--Emitter Breakdown Voltage
(I
Collector--Base Breakdown Voltage
(I
Emitter--Base Breakdown Voltage
(I
Collector--Base Cutoff Current
(V
Collector--Emitter Cutoff Current
(V
DC Current Gain (Note 2)
(V
Collector--Emitter Saturation Voltage
(Note 2) (I
This PNP Silicon Epitaxial Planar Transistor is designed for general
Compliant
C
C
E
High h
Low V
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
minimum recommended footprint.
CB
CE
CE
= 10 mAdc, I
= 2.0 mAdc, I
= 10 mAdc, I
= 20 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
FE
CE(sat)
C
, 210 - - 460
= 100 mAdc, I
Characteristic
E
E
E
B
C
, < 0.5 V
B
Rating
Rating
= 0)
= 0)
= 0)
= 0)
= 2.0 mAdc)
= 0)
(T
B
A
= 10 mAdc)
= 25C)
V
V
V
V
V
V
Symbol
Symbol
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
(BR)CEO
(BR)CBO
(BR)EBO
h
CE(sat)
I
I
I
T
CBO
CEO
C(P)
P
T
I
FE1
stg
C
D
J
-- 55 to +150
Min
210
7.0
45
45
--
--
--
Value
Max
100
200
150
150
7.0
45
45
Max
100
340
0.1
0.5
--
--
--
1
mAdc
mAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
mW
Vdc
Vdc
Vdc
Vdc
C
C
mA
mA
--
†For information on tape and reel specifications,
MSB1218A--RT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation may vary depending
upon manufacturing location.
Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
BASE
BR
M
G
MARKING DIAGRAM
http://onsemi.com
1
SC- -70 (SOT- -323)
1
= Device Code
= Date Code*
= Pb--Free Package
1
COLLECTOR
CASE 419
(Pb--Free)
Package
STYLE 4
2
SC--70
BR M G
3
Publication Order Number:
G
3
EMITTER
MSB1218A- -RT1/D
3000 /Tape & Reel
2
Shipping
†
Related parts for MSB1218A-RT1
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANS PNP GP 100MA 45V SOT-323
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
ON Semiconductor [VOLTAGE REGULATOR]
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
ON Semiconductor
Datasheet:
MSB1218A-RT1 Summary of contents
Page 1
... MSB1218A- - RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC- -70/SOT- -323 package which is designed for low power surface mount applications. Features High h , 210 - - 460 FE ...
Page 2
R = 833C/W θ AMBIENT TEMPERATURE (C) A Figure 1. Derating Curve 1000 T = 25 75 25C A 100 10 ...
Page 3
V (V) CB Figure 7. Capacitance http://onsemi.com ...
Page 4
... H 2.00 2.10 2.40 0.079 0.083 E PIN 1. CATHODE 2. CATHODE 3. ANODE mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MSB1218A- -RT1/D MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 ...