P2N2222ARL1 ON Semiconductor, P2N2222ARL1 Datasheet

P2N2222ARL1

Manufacturer Part Number

P2N2222ARL1

Description

TRANS SS NPN 600MA 40V TO-92

Manufacturer

ON Semiconductor

Datasheet

1.P2N2222A.pdf (6 pages)

Specifications of P2N2222ARL1

Transistor Type

NPN

Current - Collector (ic) (max)

600mA

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (max)

10nA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 150mA, 10V

Power - Max

625mW

Frequency - Transition

300MHz

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

P2N2222ARL1

Quantity:

3 904

Current page: 1 of 6
Download datasheet (201Kb)

P2N2222A

Amplifier Transistors

NPN Silicon

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

March, 2006 − Rev. 3

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current − Continuous

Total Device Dissipation @ T

Operating and Storage Junction

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Pb−Free Packages are Available*

Derate above 25°C

Temperature Range

Characteristic

= 25°C unless otherwise noted)

= 25°C

Symbol

, T

CEO

CBO

EBO

qJC

qJA

stg

−55 to

Value

+150

Max

83.3

600

625

200

6.0

5.0

1.5

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

P2N2222A

P2N2222AG

P2N2222ARL1

P2N2222ARL1G

P2N2222AZL1

P2N2222AZL1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

CASE 29−11

(T0−226AA)

ORDERING INFORMATION

STYLE 17

P2N2

222A

TO−92

http://onsemi.com

BASE

(Pb−Free)

= Device Code

= Specific Device

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Package

TO−92

COLLECTOR

Publication Order Number:

EMITTER

2000 / Tape & Ammo

2000 / Tape & Reel

2000 Units / Tube

5000 Units / Bulk

MARKING

DIAGRAM

AYWW G

Shipping

P2N2

222A

P2N2222A/D

†

Related parts for P2N2222ARL1

P2N2222ARL1 Summary of contents

Page 1

... Unit R 200 °C/W qJA R 83.3 °C/W qJC Device P2N2222A P2N2222AG P2N2222ARL1 P2N2222ARL1G P2N2222AZL1 P2N2222AZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 1 2 BASE ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mAdc Collector −Base Breakdown Voltage ( mAdc Emitter −Base Breakdown Voltage ( mAdc, I ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic SWITCHING CHARACTERISTICS Delay Time ( Vdc BE(off) Rise Time I = 150 mAdc Vdc 150 mAdc, Storage Time ...

Page 4

EB(off EB(off 7.0 5.0 3.0 2.0 5.0 7 100 I , COLLECTOR CURRENT (mA) C ...

Page 5

T = 25° BE(sat 0 BE(on) CE 0.4 0 CE(sat 0.1 0.2 0.5 1.0 ...

Page 6

... SECTION X−X N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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