UNR31A900L Panasonic - SSG, UNR31A900L Datasheet
UNR31A900L
Manufacturer Part Number
UNR31A900L
Description
TRANS PNP W/RES 30HFE SSSMINI-3
Manufacturer
Panasonic - SSG
Datasheet
1.UNR31A900L.pdf
(3 pages)
Specifications of UNR31A900L
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
80mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
80MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SSS Mini3-F1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UNR31A900LTR
Transistors with built-in Resistor
UNR31A9
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2004
• Suitable for high-density mounting downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
−50
−50
−80
100
125
CB
CE
EB
CE
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJH00096AED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
Conditions
Unit
mW
B
C
mA
°C
°C
E
V
V
B
B
B
B
C
E
E
= 0
= 0
= 0
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= 1 mA, f = 200 MHz
L
Marking Symbol: DC
Internal Connection
L
= 1 kΩ
0.23
= 1 kΩ
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
(10 kΩ)
−30%
3
0.80
1.20
B
1
−4.9
0.08
Min
−50
−50
30
R
R
(0.40)
±0.05
±0.05
2
1
2
(1 kΩ)
0.10
Typ
80
1
SSSMini3-F1 Package
− 0.25
+30%
− 0.1
− 0.5
− 0.2
Max
−1.5
0.12
0.10
C
E
1: Base
2: Emitter
3: Collector
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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