PDTC143TE,115 NXP Semiconductors, PDTC143TE,115 Datasheet - Page 12

TRANS NPN W/RES 50V SOT-416

PDTC143TE,115

Manufacturer Part Number
PDTC143TE,115
Description
TRANS NPN W/RES 50V SOT-416
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PDTC143TE,115

Package / Case
SC-75, SOT-416
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
150mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
4.7 KOhm
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Resistor - Emitter Base (r2) (ohms)
-
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2161-2
934057864115
PDTC143TE T/R
NXP Semiconductors
2004 Aug 06
Plastic surface-mounted package; 3 leads
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT416
0.95
0.60
A
max
0.1
A 1
1
0.30
0.15
b p
IEC
e 1
0.25
0.10
c
D
e
1.8
1.4
b p
3
D
JEDEC
0.9
0.7
E
2
REFERENCES
e
1
w
0
B
M
B
0.5
e
1
SC-75
JEITA
scale
0.5
12
v
1.75
1.45
M
H
E
A
0.45
0.15
1 mm
L
p
A
A 1
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
PDTC143T series
L p
A
Q
c
X
Product data sheet
ISSUE DATE
04-11-04
06-03-16
SOT416

Related parts for PDTC143TE,115