PDTC143TE,115 NXP Semiconductors, PDTC143TE,115 Datasheet - Page 9

TRANS NPN W/RES 50V SOT-416

PDTC143TE,115

Manufacturer Part Number
PDTC143TE,115
Description
TRANS NPN W/RES 50V SOT-416
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PDTC143TE,115

Package / Case
SC-75, SOT-416
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
150mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
4.7 KOhm
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Resistor - Emitter Base (r2) (ohms)
-
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2161-2
934057864115
PDTC143TE T/R
NXP Semiconductors
2004 Aug 06
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Plastic single-ended leaded (through hole) package; 3 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43A
JEITA
scale
2.5
9
1.27
e 1
14.5
12.7
5 mm
L
L 1
L
max.
2.5
1
(1)
L
PROJECTION
EUROPEAN
PDTC143T series
Product data sheet
ISSUE DATE
b
04-06-28
04-11-16
c
e 1
e
SOT54

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