PDTC115ET,215 NXP Semiconductors, PDTC115ET,215 Datasheet - Page 5

TRANS NPN 50V 20MA SOT23

PDTC115ET,215

Manufacturer Part Number
PDTC115ET,215
Description
TRANS NPN 50V 20MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC115ET,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Resistor - Emitter Base (r2) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
100 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
20 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057527215
PDTC115ET T/R
PDTC115ET T/R
NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
2004 Aug 06
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
th(j-a)
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT833
SOT490
PARAMETER
PARAMETER
V
V
V
V
V
I
I
I
f = 1 MHz
C
C
C
E
CB
CE
CE
EB
CE
= i
= 5 mA; I
= 100 μA; V
= 1 mA; V
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0 A; V
5
CONDITIONS
C
B
C
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
notes 1 and 2
CE
E
B
B
= 0.25 mA
= 0 A
= 5 mA
CE
CB
= 0 A
= 0 A
= 0 A; T
= 0.3 V
CONDITIONS
= 5 V
= 10 V;
j
= 150 °C
80
3
70
0.8
MIN.
PDTC115E series
VALUE
250
500
500
625
833
500
500
1.1
1.5
100
1
TYP.
Product data sheet
100
1
50
50
150
0.5
130
1.2
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
pF
UNIT

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