PDTC143XU,115 NXP Semiconductors, PDTC143XU,115 Datasheet - Page 5

• Manufacturer Part Number: PDTC143XU,115
• Description: TRANS NPN 50V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PDTC143XU,115

• Package / Case: SC-70, SOT-323
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 4.7 KOhm
• Typical Resistor Ratio: 0.476
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057543115; PDTC143XU T/R; PDTC143XU T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PDTC143X_SER_10
Product data sheet
Table 7.
[1]
[2]
[3]
Table 8.
T
Symbol
R
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
= 25
°
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
C unless otherwise specified.
Parameter
thermal resistance from
junction to ambient
Thermal characteristics
Characteristics
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
Rev. 10 — 16 November 2009
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 °C
= 10 mA; I
Conditions
in free air
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 300 mV; I
= 10 V; I
C
C
C
E
B
B
B
E
= 0 A
= 10 mA
= 100 μA
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= i
C
e
= 20 mA
= 0 A;
[1][2]
[2][3]
PDTC143X series
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
50
-
2.5
Min
-
-
-
-
-
3.3
1.7
-
Typ
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
4.7
2.1
-
© NXP B.V. 2009. All rights reserved.
Max
833
500
500
500
250
500
625
100
6.1
Max
100
1
50
600
-
0.3
-
2.6
2.5
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
kΩ
Unit
μA
μA
μA
mV
V
V
pF
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