TARNS PNP 50V 100MA SOT23

PDTC143ZT,215

Manufacturer Part NumberPDTC143ZT,215
DescriptionTARNS PNP 50V 100MA SOT23
ManufacturerNXP Semiconductors
PDTC143ZT,215 datasheet
 

Specifications of PDTC143ZT,215

Package / CaseTO-236-3, SC-59, SOT-23-3Transistor TypeNPN - Pre-Biased
Current - Collector (ic) (max)100mAVoltage - Collector Emitter Breakdown (max)50V
Resistor - Base (r1) (ohms)4.7KResistor - Emitter Base (r2) (ohms)47K
Dc Current Gain (hfe) (min) @ Ic, Vce100 @ 10mA, 5VVce Saturation (max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (max)1µAPower - Max250mW
Mounting TypeSurface MountConfigurationSingle
Transistor PolarityNPNTypical Input Resistor4.7 KOhm
Typical Resistor Ratio0.1Mounting StyleSMD/SMT
Collector- Emitter Voltage Vceo Max50 VPeak Dc Collector Current100 mA
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 65 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934054700215
PDTC143ZT T/R
PDTC143ZT T/R
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NXP Semiconductors
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Plastic surface-mounted package; 3 leads
1
e 1
DIMENSIONS (mm are the original dimensions)
A 1
A
UNIT
b p
c
max
0.30
0.25
0.95
mm
0.1
0.15
0.10
0.60
OUTLINE
VERSION
IEC
SOT416
2004 Aug 16
D
B
v
A
M
3
2
b p
w
B
M
e
0
0.5
scale
D
E
e
e
H
1
E
1.8
0.9
1.75
1
0.5
1.4
0.7
1.45
REFERENCES
JEDEC
JEITA
SC-75
11
PDTC143Z series
E
A
H E
Q
A
A 1
L p
detail X
1 mm
L
Q
v
w
p
0.45
0.23
0.2
0.2
0.15
0.13
EUROPEAN
PROJECTION
Product data sheet
SOT416
X
c
ISSUE DATE
04-11-04
06-03-16