PDTC115EM,315 NXP Semiconductors, PDTC115EM,315 Datasheet - Page 11

• Manufacturer Part Number: PDTC115EM,315
• Description: TRANS NPN W/RES 50V SOT-883
• Manufacturer: NXP Semiconductors

Specifications of PDTC115EM,315

• Package / Case: SC-101, SOT-883
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 100 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 20 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2144-2; 934057173315; PDTC115EM T/R

NXP Semiconductors
2004 Aug 06
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
1.3
e
w
B
M
0.65
B
e 1
JEITA
scale
SC-70
11
1
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
PDTC115E series
A
Q
c
Product data sheet
X
v
ISSUE DATE
04-11-04
06-03-16
M
A
SOT323