PDTC143EM,315 NXP Semiconductors, PDTC143EM,315 Datasheet - Page 7

TRANS NPN W/RES 50V SOT-883

PDTC143EM,315

Manufacturer Part Number
PDTC143EM,315
Description
TRANS NPN W/RES 50V SOT-883
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC143EM,315

Package / Case
SC-101, SOT-883
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
4.7 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2160-2
934057178315
PDTC143EM T/R
NXP Semiconductors
2004 Aug 05
Plastic surface-mounted package; 3 leads
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT346
1.3
1.0
A
0.013
A
0.1
1
1
0.50
0.35
b
p
IEC
e 1
0.26
0.10
c
D
e
3.1
2.7
D
3
b p
TO-236
JEDEC
1.7
1.3
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
SC-59A
1
JEITA
scale
B
1
7
3.0
2.5
H
E
0.6
0.2
L
p
A
2 mm
A 1
0.33
0.23
Q
H E
0.2
E
v
detail X
PROJECTION
0.2
EUROPEAN
w
PDTC143E series
L p
Q
A
c
X
Product data sheet
ISSUE DATE
v
04-11-11
06-03-16
M
A
SOT346

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