RN1405T5LFT Toshiba, RN1405T5LFT Datasheet

TRANSISTOR NPN 50V 0.1A SC-59

RN1405T5LFT

Manufacturer Part Number
RN1405T5LFT
Description
TRANSISTOR NPN 50V 0.1A SC-59
Manufacturer
Toshiba
Datasheet

Specifications of RN1405T5LFT

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
With built-in bias resistors
Simplified circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2401~RN2406
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristic
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1401, RN1402, RN1403
RN1404, RN1405, RN1406
RN1401~1406
RN1401~1404
RN1405, 1406
RN1401~1406
Type No.
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
R1 (kΩ
I
T
stg
C
C
j
4.7
2.2
4.7
10
22
47
1
R2 (kΩ
−55~150
Rating
4.7
10
22
47
47
47
100
200
150
50
50
10
5
JEDEC
JEITA
TOSHIBA
Weight: 0.012g (typ.)
Unit
mW
mA
°C
°C
V
V
V
RN1401~RN1406
TO-236MOD
2-3F1A
SC-59
2007-11-01
Unit: mm

Related parts for RN1405T5LFT

RN1405T5LFT Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Electrical Characteristics Characteristic Collector cut-off RN1401~1406 current RN1401 RN1402 RN1403 Emitter cut-off current RN1404 RN1405 RN1406 RN1401 RN1402 RN1403 DC current gain RN1404 RN1405 RN1406 Collector-emitter RN1401~1406 saturation voltage RN1401 RN1402 RN1403 Input voltage (ON) RN1404 RN1405 RN1406 RN1401~1404 Input ...

Page 3

RN1401 RN1403 RN1405 RN1401~RN1406 RN1402 RN1404 RN1406 3 2007-11-01 ...

Page 4

RN1401 RN1403 RN1405 RN1401~RN1406 RN1402 RN1404 RN1406 4 2007-11-01 ...

Page 5

RN1401 RN1403 RN1405 RN1401~RN1406 RN1402 RN1404 RN1406 5 2007-11-01 ...

Page 6

RN1401 RN1403 RN1405 RN1401~RN1406 RN1402 RN1404 RN1406 6 2007-11-01 ...

Page 7

Type Name Marking RN1401 RN1402 RN1403 RN1404 RN1405 RN1406 RN1401~RN1406 7 2007-11-01 ...

Page 8

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

Related keywords