PDTC115EEF,115 NXP Semiconductors, PDTC115EEF,115 Datasheet - Page 7

• Manufacturer Part Number: PDTC115EEF,115
• Description: TRANS NPN W/RES 50V SOT-490
• Manufacturer: NXP Semiconductors

Specifications of PDTC115EEF,115

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2143-2; 934057872115; PDTC115EEF T/R

NXP Semiconductors
2004 Aug 06
Plastic surface-mounted package; 3 leads
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT346
1.3
1.0
A
0.013
A
0.1
1
1
0.50
0.35
b
p
IEC
e 1
0.26
0.10
c
D
e
3.1
2.7
D
3
b p
TO-236
JEDEC
1.7
1.3
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
SC-59A
1
JEITA
scale
B
1
7
3.0
2.5
H
E
0.6
0.2
L
p
A
2 mm
A 1
0.33
0.23
Q
H E
0.2
E
v
detail X
PROJECTION
0.2
EUROPEAN
w
PDTC115E series
L p
Q
A
c
X
Product data sheet
ISSUE DATE
v
04-11-11
06-03-16
M
A
SOT346